BUF08832_14 Datasheet, PDF (2/31 Pages) Texas Instruments – Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory

BUF08832
SBOS476C – AUGUST 2009 – REVISED JULY 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PRODUCT
BUF08832
PACKAGE/ORDERING INFORMATION⁽¹⁾
PACKAGE
PACKAGE DESIGNATOR
HTSSOP-20
PWP
PACKAGE MARKING
BUF08832
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
Supply Voltage
V_S
Supply Voltage
V_SD
Digital Input Pins, SCL, SDA, AO, BKSEL: Voltage
Digital Input Pins, SCL, SDA, AO, BKSEL: Current
Output Pins, OUT1 through OUT16, V_COM1 and V_COM2⁽²⁾
Output Short-Circuit⁽³⁾
Ambient Operating Temperature
Ambient Storage Temperature
Junction Temperature
Human Body Model
T_J
HBM
ESD Rating
Charged Device Model
CDM
Machine Model
MM
BUF08832
+22
+6
–0.5 to +6
±10
(V–) – 0.5 to (V+) + 0.5
Continuous
–40 to +95
–65 to +150
+125
4000
1000
200
UNIT
V
V
V
mA
V
°C
°C
°C
V
V
V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not supported.
(2) See the Output Protection section.
(3) Short-circuit to ground, one amplifier per package.
2
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