INA199B2DCKR Datasheet, PDF (16/28 Pages) Texas Instruments – Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series CURRENT SHUNT MONITOR

INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
SBOS469D – MAY 2009 – REVISED NOVEMBER 2012
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IMPROVING TRANSIENT ROBUSTNESS
Applications involving large input transients with excessive dV/dt above 2kV per microsecond present at the
device input pins may cause damage to the internal ESD structures on version A devices. This potential damage
is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With
significant current available in most current-sensing applications, the large current flowing through the input
transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can
be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Care must be
taken to ensure that external series input resistance does not significantly impact gain error accuracy. For
accuracy purposes, these resistances should be kept under 10Ω if possible. Ferrite beads are recommended for
this filter because of their inherently low dc ohmic value. Ferrite beads with less than 10Ω of resistance at dc and
over 600Ω of resistance at 100MHz to 200MHz are recommended. The recommended capacitor values for this
filter are between 0.01µF and 0.1µF to ensure adequate attenuation in the high-frequency region. This protection
scheme is shown in Figure 26.
Reference
Voltage
REF
GND
V+
+2.7V to +26V
0.01mF
to 0.1mF
Device
1MW R3
-
1MW
R4
OUT
Load
IN-
Shunt
IN+
0.01mF
to 0.1mF
MMZ1608B601C
Supply
Output
Figure 26. Transient Protection
To minimize the cost of adding these external components to protect the device in applications where large
transient signals may be present, version B devices are now available with new ESD structures that are not
susceptible to this latching condition. Version B devices are incapable of sustaining these damage causing
latched conditions so they do not have the same sensitivity to the transients that the version A devices have,
thus making the version B devices a better fit for these applications.
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