TPS3600D20_16 Datasheet, PDF (12/26 Pages) Texas Instruments – BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS

TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERYĆBACKUP SUPERVISORS FOR LOWĆPOWER PROCESSORS
SLVS336B − DECEMBER 2000 − REVISED JANUARY 2007
electrical characteristics over recommended operating conditions (unless otherwise noted)
(continued)
PARAMETER
TEST CONDITIONS
MIN TYP
Vhys Hysteresis
1.65 V < VIT < 2.5 V
20
VIT
2.5 V < VIT < 3.5 V
40
3.5 V < VIT < 5.5 V
50
1.65 V < V(BOK) < 2.5 V
30
BATTOK
2.5 V < V(BOK) < 3.5 V
60
3.5 V < V(BOK) < 5.5 V
100
PFI
12
IIH
High-level input current
V(BSW)
V(SWN)
WDI (see Note 5)
MR
VDD = 1.8 V
1.65 V < V(SWN) < 2.5 V
2.5 V < V(SWN) < 3.5 V
3.5 V < V(SWN) < 5.5 V
WDI = VDD = 5 V
MR = 0.7 × VDD, VDD = 5 V
66
85
100
110
−33
IIL
Low-level input current
II
Input current
WDI (see Note 5)
MR
PFI, MSWITCH
WDI = 0 V,
MR = 0 V,
VI < VDD
VDD = 5 V
VDD = 5 V
−110
−25
IOS
Short-circuit current
IDD
VDD supply current
PFO
PFO = 0 V,
VDD = 1.8 V
PFO = 0 V, VDD = 3.3 V
PFO = 0 V, VDD = 5 V
VOUT = VDD
VOUT = VBAT
I(BAT)
Ilkg
VBAT supply current
CEIN leakage current
VOUT = VDD
VOUT = VBAT
Disable mode, VI < VDD
−0.1
Ci
Input capacitance
VI = 0 V to 5.0 V
5
NOTE 5: For details on how to optimize current consumption when using WDI, see the detailed description section.
MAX
150
−76
−150
−255
25
−0.3
−1.1
−2.4
40
8
0.1
40
±1
UNIT
mV
µA
nA
mA
µA
µA
µA
pF
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12