THS4011_16 Datasheet, PDF (11/35 Pages) Texas Instruments – 290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

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THS4011
THS4012
SLOS216E – JUNE 1999 – REVISED APRIL 2010
TYPICAL CHARACTERISTICS (continued)
NOISE SPECTRAL DENSITY
vs
FREQUENCY
100
DIFFERENTIAL PHASE
vs
NUMBER OF 150-Ω LOADS
0.35°
0.3°
Gain = 2
R_F = 1 kΩ
V_CC = ±15 V
40 IRE-NTSC Modulation
0.25° ^{Worst-Case ±100 IRE Ramp}
0.2°
10
0.15°
V_CC = ±5 V
0.1°
V_CC = ±15 V or ±5 V
1
10
100
1k
10k
f − Frequency − Hz
Figure 19.
100k
0.05°
0°
1
2
3
4
Number of 150-Ω Loads
Figure 20.
DIFFERENTIAL PHASE
vs
NUMBER OF 150-Ω LOADS
0.4°
0.35°
0.3°
Gain = 2
R_F = 1 kΩ
40 IRE-PAL Modulation
Worst-Case ±100 IRE Ramp
0.25°
0.2°
V_CC = ±15 V
0.15°
0.1°
V_CC = ±5 V
0.05°
0°
1
2
3
4
Number of 150-Ω Loads
Figure 21.
DIFFERENTIAL GAIN
vs
NUMBER OF 150-Ω LOADS
0.05
Gain = 2
R_F = 1 kΩ
0.04 ^{40 IRE-NTSC Modulation}
Worst-Case ±100 IRE Ramp
0.03
0.02
V_CC = ±15 V
0.01
V_CC = ±5 V
0
1
2
3
4
Number of 150-Ω Loads
Figure 22.
DIFFERENTIAL GAIN
vs
NUMBER OF 150-Ω LOADS
0.06
Gain = 2
R_F = 1 kΩ
0.05 _{40 IRE-PAL Modulation}
Worst-Case ±100 IRE Ramp
0.04
0.03
0.02
0.01
V_CC = ±15 V
V_CC = ±5 V
0
1
2
3
4
Number of 150-Ω Loads
Figure 23.
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