SN75374_14 Datasheet, PDF (11/19 Pages) Texas Instruments – QUADRUPLE MOSFET DRIVER

SN75374
QUADRUPLE MOSFET DRIVER
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
APPLICATION INFORMATION
driving power MOSFETs (continued)
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as
shown by the equation:
I_PK
+
VC
t_r
where C is the capacitive load and t_r is the desired rise time. V is the voltage that the capacitance is charged
to. In the circuit shown in Figure 14a, V is found by the equation:
V = V_OH − V_OL
Peak current required to maintain a rise time of 100 ns in the circuit of Figure 14a is:
I_PK
+
(3 * 0)4(10^−9)
100(10^−9)
+
120 mA
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.
With a V_CC of 5 V and assuming worst-case conditions, the gate drive voltage is 3 V.
For applications in which the full voltage of V_CC2 must be supplied to the MOSFET gate, V_CC3 should be at least
3 V higher than V_CC2.
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