LMV881_16 Datasheet, PDF (11/26 Pages) Texas Instruments – LMV881 23 MHz Low Power CMOS EMI Hardened Operational Amplifier with 1.8V Logic Shutdown

LMV881
www.ti.com
SNOSC62B – JANUARY 2012 – REVISED MAY 2013
Typical Performance Characteristics (continued)
At T_A = 25°C, V⁺ = 5V, V^− = 0V, V_CM = V⁺/2, and R_L =10 kΩ to V⁺/2, unless otherwise specified.
Input Voltage Noise
THD+N
vs.
vs.
Frequency
Frequency
1k
3.3V and 5V
0.1
R_L = 10 k:
V_OUT = 1V_PP
BW = 500 kHz
V_S = 3.3V & 5V
A_V = +10
100
0.01
10
A_V = +1
1
100m 1
10 100 1k 10k 100k 1M
FREQUENCY (Hz)
Figure 20.
THD+N
vs.
Amplitude
10
R_L = 10 k:
f = 1 kHz
1 ^{BW = 20 kHz}
Av = +10
0.1
V_S = 3.3V
0.01
Av = +1
0.001
0.0001
10m
100m
1
V_OUT (Vpp)
Figure 22.
V_S = 5V
10
EMIRR IN+
vs.
Power at 900 MHz
120
110
100
90
125°C
80
85°C
70
60
25°C
50
-40°C
40
30
f_RF = 900 MHz
20
-40 -30 -20 -10
0
10
RF INPUT PEAK VOLTAGE (dBVp)
Figure 24.
0.001
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 21.
EMIRR IN+
vs.
Power at 400 MHz
120
110
100
90
80
125°C
70
85°C
60
50
25°C
40
-40°C
30
f_RF = 400 MHz
20
-40 -30 -20 -10
0
10
RF INPUT PEAK VOLTAGE (dBVp)
Figure 23.
EMIRR IN+
vs.
Power at 1800 MHz
120
110
125°C
85°C
100
90
80
25°C
-40°C
70
60
50
40
30
f_RF = 1800 MHz
20
-40 -30 -20 -10
0
10
RF INPUT PEAK VOLTAGE (dBVp)
Figure 25.
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