TC253 Datasheet, PDF (10/19 Pages) Texas Instruments – 680x500 PIXEL CCD IMAGE SENSOR

TC253SPD
680ā×ā500 PIXEL CCD IMAGE SENSOR
SOCS062B – JANUARY 2001 – REVISED MAY 2002
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
Charge multiplication gain
PARAMETER
MIN
TYP^†
MAX UNIT
1
30 (100)^‡
Charge multiplication gain temperature coefficient
%/°C
Excess noise factor for typical CCM gain (see Note 2)
1
1.2
1.4
Dynamic range without CCM gain
58
dB
Dynamic range with typical CCM gain (see Note 3)
50
dB
Charge conversion gain without CCM (see Note 4)
τ
Signal-response delay time (see Note 5)
Output resistance
Amplifier noise-equivalent signal without CCM gain ^§
Amplifier noise-equivalent signal with typical CCM gain ^§
10
µV/e
9
ns
320
Ω
42
e
1.5
e
Response linearity with no CCM gain
1
Response linearity with typical CCM gain
1
Charge-transfer efficiency (see Note 6)
0.9998 0.9999
Supply current
2
3
4 mA
IAG-1
2.95
IAG-2
3.22
IAG-1–IAG2
SAG-1
1.98
nF
3.04
SAG-2
3.62
Ci
Input capacitance
SAG-1–SAG2
2.22
SRG-1
40
SRG-2
40
SRG-1–SRG2
CMG
pF
30
CMG–SRG1
ODB
1,000
ADB high (see Note 7)
20
SRG-1, 2 high (see Note 7)
45
Pulse amplitude rejection ratio
SRG-1, 2 low (see Note 7)
CMG high (see Note 7)
45
dB
45
CMG low (see Note 7)
45
ODB low (see Note 7)
45
† _{All typical values are at TA = 25°C.}
‡ _{Maximum CCM gain is not ensured.}
§ _{The values in this table are quoted using correlated double sampling (CDS), which is a signal processing technique that improves performance}
by minimizing undesirable effects of reset noise.
NOTES: 2. Excess noise factor F is defined as the ratio of noise sigma after multiplication divided by M times the noise sigma before
multiplication where M is the charge multiplication gain.
3. Dynamic range is –20 times the logarithm of the mean noise sigma divided by the saturation output signal amplitude.
4. Charge conversion factor is defined as the ratio of output signal to input number of electrons.
5. Signal-response delay time is the time between the falling edge of the SRG2 pulse and the output signal valid state.
6. Charge transfer efficiency is 1 minus the charge loss per transfer in the CCD register. The test is performed in the dark using either
electrical or optical input.
7. Rejection ratio is –20 times the logarithm of the output referenced to the reset level divided by the 1 V of amplitude change of the
corresponding gate or terminal signal.
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