ADC08500 Datasheet, PDF (10/46 Pages) National Semiconductor (TI) – High Performance, Low Power 8-Bit, 500 MSPS A/D Converter

ADC08500
SNAS373E – MAY 2007 – REVISED APRIL 2013
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Converter Electrical Characteristics (continued)
The following specifications apply after calibration for V_A = V_DR = +1.9V_DC, OutV = 1.9V, V_IN FSR (a.c. coupled) = differential
870 mV_P-P, C_L = 10 pF, Differential, a.c. coupled Sinewave Input Clock, f_CLK = 500 MHz at 0.5V_P-P with 50% duty cycle,
V_BG = Floating, Non-Extended Control Mode, SDR Mode, R_EXT = 3300Ω ±0.1%, Analog Signal Source Impedance = 100Ω
Differential. Boldface limits apply for T_A = T_MIN to T_MAX. All other limits T_A = 25°C, unless otherwise noted. See ⁽¹⁾⁽²⁾
Symbol
Parameter
Conditions
Typical ⁽³⁾ Limits ⁽³⁾
Units
(Limits)
f_IN = 50 MHz, V_IN = FSR − 0.5 dB
2nd Harm Second Harmonic Distortion
f_IN = 124 MHz, V_IN = FSR − 0.5 dB
f_IN = 248 MHz, V_IN = FSR − 0.5 dB
f_IN = 50 MHz, V_IN = FSR − 0.5 dB
3rd Harm Third Harmonic Distortion
f_IN = 124 MHz, V_IN = FSR − 0.5 dB
f_IN = 248 MHz, V_IN = FSR − 0.5 dB
f_IN = 50 MHz, V_IN = FSR − 0.5 dB
SFDR
Spurious-Free dynamic Range
f_IN = 124 MHz, V_IN = FSR − 0.5 dB
f_IN = 248 MHz, V_IN = FSR − 0.5 dB
IMD
Intermodulation Distortion
f_IN1 = 121 MHz, V_IN = FSR − 7 dB
f_IN2 = 126 MHz, V_IN = FSR − 7 dB
Out of Range Output Code
(In addition to OR Output high)
(V_IN+) − (V_IN−) > + Full Scale
(V_IN+) − (V_IN−) < − Full Scale
ANALOG INPUT AND REFERENCE CHARACTERISTICS
−60
dB
−60
dB
−60
dB
−65
dB
−65
dB
−65
dB
55
dB
56
47.5
dB (min)
56
47.5
dB (min)
-50
dB
255
0
V_IN
V_CMI
C_IN
Full Scale Analog Differential Input
Range
FSR pin 14 Low
FSR pin 14 High
Analog Input Common Mode Voltage
Analog Input Capacitance, Normal
operation ⁽⁵⁾⁽⁶⁾
Differential
Each input pin to ground
650
870
V_CMO
0.02
1.6
570
730
790
950
V_CMO − 50
V_CMO + 50
mV_P-P (min)
mV_P-P (max)
mV_P-P (min)
mV_P-P (max)
mV (min)
mV (max)
pF
pF
R_IN
Differential Input Resistance
94
Ω (min)
100
106
Ω (max)
ANALOG OUTPUT CHARACTERISTICS
V_CMO
Common Mode Output Voltage
I_CMO = ±100 µA
1.26
0.95
1.45
V (min)
V (max)
V_{CMO_LVL}
TC V_CMO
V_CMO input threshold to set DC
Coupling mode
Common Mode Output Voltage
Temperature Coefficient
V_A = 1.8V
V_A = 2.0V
T_A = −40°C to +85°C
0.60
V
0.66
V
118
ppm/°C
C_LOAD
V_CMO
V_BG
Maximum V_CMO load Capacitance
Bandgap Reference Output Voltage
I_BG = ±100 µA
80
1.26
1.20
1.33
pF
V (min)
V (max)
TC V_BG
Bandgap Reference Voltage
Temperature Coefficient
C_LOAD V_BG
Maximum Bandgap Reference Load
Capacitance
T_A = −40°C to +85°C
I_BG = ±100 µA
28
ppm/°C
80
pF
TEMPERATURE DIODE CHARACTERISTICS
ΔV_BE
Temperature Diode Voltage
192 µA vs. 12 µA,
T_J = 25°C
192 µA vs. 12 µA,
T_J = 85°C
71.23
mV
85.54
mV
(5) The analog and clock input capacitances are die capacitances only. Additional package capacitances of 0.65 pF differential and 0.95 pF
each pin to ground are isolated from the die capacitances by lead and bond wire inductances.
(6) This parameter is specified by design and is not tested in production.
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