TXS4558 Datasheet, PDF (1/18 Pages) Texas Instruments – Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO

TXS4558
www.ti.com
SLLSE93A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011
Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO
Check for Samples: TXS4558
FEATURES
1
• Level Translator
– V_CC Range of 1.65 V to 3.3 V
– V_BATT Range of 2.3V to 5.5V
• Low-Dropout (LDO) Regulator
– 50-mA LDO Regulator With Enable
– 1.8-V or 2.95-V Selectable Output Voltage
– Very Low Dropout: 100 mV (Max) at 50 mA
• Control and Communication Through GPIO
Interface with Baseband Processor
• Isolated Clock Stop Mode for both SIM1 and
SIM2 cards
• ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-B)
– 500-V Charged-Device Model (C101)
– 8kV HBM for SIM pins
• Package
– 20-Pin QFN (3 mm x 3 mm)
RUK PACKAGE
(TOP VIEW)
VSIM2 1
V_CC ²
V_BATT 3
VSIM1 ⁴
SIM1_CLK ⁵
GND
15 CLKRUN2
14 CLKRUN1
13 CSEL
12 VSEL1
11 En1
NOTE: Exposed center thermal pad must be
electrically connected to Ground.
DESCRIPTION
The TXS4558 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wire-
less baseband processors with two individual SIM subscriber cards to store data for mobile handset applications.
It is a custom device which is used to extend a single SIM/UICC interface to be able to support two
SIM’s/UICC’s.
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards.
It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces,
two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B
and 1.8-V Class-C interfaces. Simple GPIO inputs are used to switch between the two SIM cards and to put it
into different modes. The voltage-level translator has two supply voltage pins. VCC sets the reference for the
baseband interface and can be operated from 1.65 V to 3.3 V. VSIM1 and VSIM2 are programmed to either
1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input
battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or
Class-C SIM card.
The TXS4558 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification
for SIM cards. The device also has 8kV HBM protection for the SIM card pins and standard 2kV HBM protection
for all the other pins.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated