TS3DDR32611_14 Datasheet, PDF (1/12 Pages) Texas Instruments – 1A Peak Sink/Source PCDDR3 Termination Regulator with Integrated Isolation Switch and Low Power Mode Operation

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TS3DDR32611
SCDS347A – AUGUST 2013 – REVISED SEPTEMBER 2013
1A Peak Sink/Source PCDDR3 Termination Regulator with Integrated Isolation Switch and
Low Power Mode Operation
Check for Samples: TS3DDR32611
FEATURES
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• VDD Range – 3.0V to 3.6V
• R_ON 1.75Ω typical
• Channel Count – 26
• V_DDQ – Input Voltage 1.2V to 3.5V
• V_TT – V_DDQ/2 typical with 1A sink/source
capability
• V_REF – V_DDQ/2±1% × V_DDQ
• Switch Time – (T_ON/OFF) 100ns Max
• I_DD Supply Current
– High Speed Mode (I_DD,HS) 220 µA Max
– Low Speed Mode (I_DD,LS) 220 µA Max
– Power Down Mode (I_DD,PD) 5 µA Max
• Special Features
– 1.8-V Compatible Control Inputs (VTT_EN,
ODT_EN)
– High current Sinking/Sourcing Capability:
1A Max
• 48-Ball ZQC Package (4mm x 4mm, 0.5mm
pitch)
APPLICATIONS
• Double Data Rate type 3 (PCDDR3) termination
and regulation in mobile devices
DESCRIPTION
The TS3DDR32611 is a sink/source double data rate
type III (PCDDR3) termination regulator with a 1%
accuracy buffered reference output. It has built-in
termination SPST switches that can be disconnected
when the memory system undergoes lower speed
operation without the need of voltage termination.
Turning off these switches enables significant power
saving on the memory system. The switches on-state
resistance has a typical value of only 1.75Ω which
helps retain signal integrity on the signal lines.
The TS3DDR32611 is powered from a 3.3V supply.
The V_DDQ pin takes 1.2V to 1.8V input while the
output voltage at V_TT pin is tracking 1/2 × V_DDQ. The
regulator’s V_TT output is capable of sinking/sourcing
up to 1A current, while the V_REF pin output is
1/2V_DDQ±1% × V_DDQ with 5mA current
sinking/sourcing capability. The TS3DDR32611 has 4
modes of operation: high speed, low speed, V_REF
mode and power down mode, depending on the
control signals VTT_EN and ODT_EN. These
different modes of operation provide flexibility to
establish a memory system’s performance and power
consumption.
The TS3DDR32611 is situated within a small 48 balls
BGA package with only 4mm x 4mm in size, which
makes it a perfect candidate to be used in mobile
applications.
SWITCH DIAGRAM
VLDOIN
VDDQ
3.3V
Supply
VTT
Regulator
VTT_EN
OBT_EN
VDD
GND
TS3DDR32611
VREF
VTT
VTTSNS
PGND
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated