TPS79015_08 Datasheet, PDF (1/20 Pages) Texas Instruments – ULTRALOW-POWER LOW-NOISE 50-mA ULTRALOW-POWER LOW-NOISE 50-mA

TPS79015, TPS79018, TPS79025, TPS79028, TPS79030
ULTRALOW-POWER LOW-NOISE 50-mA
LOW-DROPOUT LINEAR REGULATORS
SLVS299B – SEPTEMBER 2000 – REVISED MAY 2001
D 50-mA Low-Dropout Regulator
D Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V
D Output Noise Typically 56 µV_RMS
(TPS79030)
D Only 17 µA Quiescent Current at 50 mA
D 1 µA Quiescent Current in Standby Mode
D Dropout Voltage Typically 57 mV at 50 mA
(TPS79030)
D Over Current Limitation
D –40°C to 125°C Operating Junction
Temperature Range
D 5-Pin SOT-23 (DBV) Package
description
The TPS790xx family of low-dropout (LDO)
voltage regulators offers the benefits of
low-dropout voltage, ultralow-power operation,
low-output noise, and miniaturized packaging.
These regulators feature low-dropout voltages
and ultralow quiescent current compared to
conventional LDO regulators. An internal resistor,
in conjunction with an external bypass capacitor,
creates a low-pass filter to reduce the noise. The
TPS79030 exhibits only 56 µV_RMS of output
voltage noise using 0.01 µF bypass and 10 µF
output capacitors. Offered in a 5-terminal small
outline integrated-circuit SOT-23 package, the
TPS790xx series devices are ideal for
micropower operations, low output noise, and
where board space is limited.
The usual PNP pass transistor has been replaced
by a PMOS pass element. Because the PMOS
pass element behaves as a low-value resistor, the
dropout voltage is very low, typically 57 mV at
50 mA of load current (TPS79030), and is directly
proportional to the load current. The quiescent
current is ultralow (17 µA typically) and is stable
over the entire range of output load current (0 mA
to 50 mA). Intended for use in portable systems
such as laptops and cellular phones, the
ultralow-dropout voltage feature and ultralow-
power operation result in a significant increase in
system battery operating life.
DBV PACKAGE
(TOP VIEW)
IN
1
5
OUT
GND
2
EN
3
4
BYPASS
TPS79030
GROUND CURRENT
vs
JUNCTION TEMPERATURE
22
VI = 4 V
21 ^{Co = 4.7 µF}
20
IO = 50 mA
19
IO = 1 mA
18
17
16
15
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ – Junction Temperature – °C
1200
1000
TPS78930
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
VI = 4 V
Co = 4.7 µF
C(byp) = 0.1 µF
800
600
IO = 50 mA
400
IO = 1 mA
200
0
100
1k
10k
100k
f – Frequency – Hz
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright  2001, Texas Instruments Incorporated
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