TPS65030_15 Datasheet, PDF (1/27 Pages) Texas Instruments – Power-Management IC

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TPS65030
SLVS620C – JULY 2007 – REVISED SEPTEMBER 2015
TPS65030 Power-Management IC for USB-OTG
1 Features
•1 Four Regulated Output Voltages With 3%
Tolerance
– Fractional Charge Pump for 5 V, 100 mA
– Fractional Charge Pump for 1.5 V, 200 mA
– Doubling Charge Pump With LDO Mode for
3.3 V, 22 mA
– LDO for 1.8 V, 60 mA
• Switching Frequency 1 MHz
• 3-V to 5-V Operating Input Voltage Range at V_CC
Pin
• Sleep Mode Sets Vout2 and Vout3 Into LDO
Mode
• Sleep Mode Reduces Quiescent Current of Vout2,
Vout3, and Vout4 to 8-μA Each
• Internal Bus Switch
• Vbus Comparator
• Internal Soft Start Limits Inrush Current
• Low Input Current Ripple and Low EMI
• Overcurrent and Overtemperature Protected
• Undervoltage Lockout With Hysteresis
• Ultra-Small 2.50-mm × 2.70-mm Chip Scale
Package Applications
2 Applications
• Power Supply for USB OTG for:
– Cellular Phones
– Smart Phones
– PDAs
– Handheld PCs
– Digital Cameras
– Camcorders
3 Description
The TPS65030 device contains three charge pumps
and one LDO to generate all supply voltages
necessary for a USB On-The-Go (OTG)
implementation using TUSB6010. The charge pumps
are optimized for a single Li-Ion cell input or for 5 V
from the USB bus. The input voltage range is 3 V to
5 V for the battery voltage. High efficiency is achieved
by using fractional conversion techniques for the
charge pumps in combination with a power saving
sleep mode. The current-controlled charge pumps
ensure low input current ripple and low EMI. Small
sized external ceramic capacitors are required to
build a complete power-supply solution. To reduce
board space to a minimum, the device switches at
1-MHz operating frequency and is available in a small
25-ball chip scale package (YZK).
Device Information⁽¹⁾
PART NUMBER
PACKAGE
BODY SIZE (MAX)
TPS65030
DSBGA (25)
2.51 mm × 2.70 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
spacing
spacing
3 V . . .4.2 V (5 V)
10 mF
Functional Block Diagram
TPS65030
VIN
VIN
EN1 (5 V)
EN2 (3.3 V
and 1.5 V)
EN3 (1.8 V)
SLEEP
PGood
SW_EN1
Vbus
Charge CF1A+
Pump
CF1A−
CF1B+
CF1B−
Vout2
Charge CF2+
Pump
CF2−
C_o1
4.7 mF
1 mF
1 mF
C_o2
1 mF
100 nF
5 V/100 mA
3.3 V/22 mA
SW_EN2
Test SRP
PGND
PGND
GND
Vout3
Charge CF3+
Pump
CF3−
C_o3
10 mF
1 mF
1.5 V/200 mA
Vout4
LDO
C_o4
1 mF
1.8 V/60 mA
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.