TPS28226_15 Datasheet, PDF (1/39 Pages) Texas Instruments – TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers

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TPS28226
SLUS791A – JULY 2007 – REVISED SEPTEMBER 2015
TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers
1 Features
•1 Drives Two N-Channel MOSFETs with 14-ns
Adaptive Dead Time
• Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With
Best Efficiency at 7 V to 8 V
• Wide Power System Train Input Voltage: 3 V Up
to 27 V
• Wide Input PWM Signals: 2.0 V up to 13.2-V
Amplitude
• Capable to Drive MOSFETs with ≥40-A Current
per Phase
• High Frequency Operation: 14-ns Propagation
Delay and 10-ns Rise/Fall Time Allow F_SW – 2
MHz
• Capable to Propagate <30-ns Input PWM Pulses
• Low-Side Driver Sink On-Resistance (0.4 Ω)
Prevents dV/dT Related Shoot-Through Current
• 3-State PWM Input for Power Stage Shutdown
• Space Saving Enable (Input) and Power Good
(Output) Signals on Same Pin
• Thermal Shutdown
• UVLO Protection
• Internal Bootstrap Diode
• Economical SOIC-8 and Thermally Enhanced 3-
mm x 3-mm DFN-8 Packages
• High Performance Replacement for Popular 3-
State Input Drivers
2 Applications
• Multi-Phase DC-to-DC Converters with Analog or
Digital Control
• Desktop and Server VRMs and EVRDs
• Portable and Notebook Regulators
• Synchronous Rectification for Isolated Power
Supplies
3 Description
The TPS28226 is a high-speed driver for N-channel
complimentary driven power MOSFETs with adaptive
dead-time control. This driver is optimized for use in
variety of high-current one and multi-phase DC-to-DC
converters. The TPS28226 is a solution that provides
high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8-V gate drive
voltage, 14-ns adaptive dead-time control, 14-ns
propagation delays and high-current 2-A source and
4-A sink drive capability. The 0.4-Ω impedance for
the lower gate driver holds the gate of power
MOSFET below its threshold and ensures no shoot-
through current at high dV/dt phase node transitions.
The bootstrap capacitor charged by an internal diode
allows use of N-channel MOSFETs in a half-bridge
configuration.
Device Information⁽¹⁾
PART NUMBER PACKAGE
BODY SIZE (NOM)
TPS28226
SOIC (8)
VSON (8)
4.90 mm × 3.91 mm
3.00 mm x 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
Vc (4.5V to 8V)
TPS28226
6 _VDD
BOOT 2
Vin (4.5 V to 24V)
TL500X
VCC 3
OUT 3
FB 3
GND
3
UGATE 1
3 PWM PHASE 8
7 _ENBL
LGATE 5
GND 4
Vout
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.