TPS28225-Q1 Datasheet, PDF (1/34 Pages) Texas Instruments – High-Frequency 4-A Sink Synchronous MOSFET Drivers

TPS28225-Q1
TPS28226-Q1
www.ti.com
SLUSAR9A – DECEMBER 2011 – REVISED MAY 2012
High-Frequency 4-A Sink Synchronous MOSFET Drivers
Check for Samples: TPS28225-Q1, TPS28226-Q1
FEATURES
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• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following
Results:
– Device Temperature Grade 2: –40°C to
105°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C3B
• Drives Two N-Channel MOSFETs with 14-ns
Adaptive Dead Time
• Wide Gate Drive Voltage: 4.5 V Up to 8.8 V
With Best Efficiency at 7 V to 8 V
• Wide Power System Train Input Voltage: 3 V
Up to 27 V
• Wide Input PWM Signals: 2.0 V up to 13.2-V
Amplitude
• Capable Drive MOSFETs with ≥40-A Current
per Phase
• High Frequency Operation: 14-ns Propagation
Delay and 10-ns Rise/Fall Time Allow F_SW - 2
MHz
• Capable Propagate <30-ns Input PWM Pulses
• Low-Side Driver Sink On-Resistance (0.4 Ω)
Prevents dV/dT Related Shoot-Through
Current
• 3-State PWM Input for Power Stage Shutdown
• Space Saving Enable (input) and Power Good
(output) Signals on Same Pin
• Thermal Shutdown
• UVLO Protection
• Internal Bootstrap Diode
• Economical SOIC-8 and Thermally Enhanced
3-mm x 3-mm DFN-8 Packages
• High Performance Replacement for Popular 3-
State Input Drivers
APPLICATIONS
• Multi-Phase DC-to-DC Converters with Analog
or Digital Control
• Desktop and Server VRMs and EVRDs
• Portable/Notebook Regulators
• Synchronous Rectification for Isolated Power
Supplies
DESCRIPTION
The TPS28225-Q1 and TPS28226-Q1 are high-
speed drivers for N-channel complimentary driven
power MOSFETs with adaptive dead-time control.
These drivers are optimized for use in variety of high-
current one and multi-phase dc-to-dc converters. The
TPS28225-Q1 is a solution that provides highly
efficient, small size low EMI emissions.
The performance is achieved by up to 8.8-V gate
drive voltage, 14-ns adaptive dead-time control, 14-ns
propagation delays and high-current 2-A source and
4-A sink drive capability. The 0.4-Ω impedance for
the lower gate driver holds the gate of power
MOSFET below its threshold and ensures no shoot-
through current at high dV/dt phase node transitions.
The bootstrap capacitor charged by an internal diode
allows use of N-channel MOSFETs in half-bridge
configuration.
The TPS28225-Q1 features a 3-state PWM input
compatible with all multi-phase controllers employing
3-state output feature. As long as the input stays
within 3-state window for the 250-ns hold-off time, the
driver switches both outputs low. This shutdown
mode prevents a load from the reversed- output-
voltage.
The other features include under voltage lockout,
thermal shutdown and two-way enable/power good
signal. Systems without 3-state featured controllers
can use enable/power good input/output to hold both
outputs low during shutting down.
The TPS28225-Q1 is offered in an economical SOIC-
8 and thermally enhanced low-size Dual Flat No-Lead
(DFN-8) packages. The driver is specified in the
extended temperature range of –40°C to 105°C with
the absolute maximum junction temperature 150°C.
The TPS28226-Q1 operates in the same manner as
the TPS28225-Q1 other than the input under voltage
lock out. Unless otherwise stated all references to
the TPS28225-Q1 apply to the TPS28226-Q1 also.
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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