TPS2300IPWR Datasheet, PDF (1/25 Pages) Texas Instruments – DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

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TPS2300
TPS2301
SLVS265H – FEBRUARY 2000 – REVISED JULY 2013
DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND
POWER-GOOD REPORTING
Check for Samples: TPS2300, TPS2301
FEATURES
1
• Dual-Channel High-Side MOSFET Drivers
• IN1: 3 V to 13 V; IN2: 3 V to 5.5 V
• Output dV/dt Control Limits Inrush Current
• Circuit-Breaker With Programmable
Overcurrent Threshold and Transient Timer
• Power-Good Reporting With Transient Filter
• CMOS- and TTL-Compatible Enable Input
• Low, 5-μA Standby Supply Current (Max)
• Available in 20-Pin TSSOP Package
• 40°C to 85°C Ambient Temperature Range
• Electrostatic Discharge Protection
APPLICATIONS
• Hot-Swap/Plug/Dock Power Management
• Hot-Plug PCI, Device Bay
• Electronic Circuit Breaker
DESCRIPTION
The TPS2300 and TPS2301 are dual-channel hot-
swap controllers that use external N-channel
MOSFETs as high-side switches in power
applications. Features of these devices, such as
overcurrent protection (OCP), inrush current control,
output-power status reporting, and the ability to
discriminate between load transients and faults, are
critical requirements for hot-swap applications.
GATE1
GATE2
DGND
TIMER
VREG
VSENSE2
VSENSE1
AGND
ISENSE2
ISENSE1
PW PACKAGE
(TOP VIEW)
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
DISCH1
DISCH2
ENABLE
PWRGD1
FAULT
ISET1
ISET2
PWRGD2
IN2
IN1
NOTE: Terminal 18 is active high on TPS2301.
typical application
V1
3 V − 13 V
IN1
VREG
ISET1 ISENSE1 GATE1
VO1
+
DISCH1
VSENSE1
AGND
DGND
TPS2300
ENABLE
IN2
ISET2 ISENSE2 GATE2
PWRGD1
FAULT
TIMER
PWRGD2
DISCH2 VSENSE2
V2
3 V − 5.5 V
VO2
+
The TPS2300/01 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the
device is off at start-up and confirm the status of the output voltage rails during operation. Each internal charge
pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel
MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power
transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent
conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during
power-state transitions, to disregard transients for a programmable period.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2000–2013, Texas Instruments Incorporated