TPS1H100-Q1 Datasheet, PDF (1/46 Pages) Texas Instruments – TPS1H100-Q1 40-V, 100-m Single-Channel Smart High-Side Power Switch

Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
TPS1H100-Q1
SLVSCM2B – OCTOBER 2014 – REVISED JUNE 2015
TPS1H100-Q1 40-V, 100-mΩ Single-Channel Smart High-Side Power Switch
1 Features
•1 Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to 125°C
Ambient Operating Temperature Range
– Device HBM ESD Classification Level H3A
– Device CDM ESD Classification Level C4B
• Single-Channel Smart High-Side Power Switch
With Full Diagnostics
– Version A: Open-Drain Status Output
– Version B: Current Sense Analog Output
• Wide Operating Voltage 3.5 to 40 V
• Very-Low Standby Current, <0.5 µA
• Operating Junction Temperature, –40 to 150°C
• Input Control, 3.3-V and 5-V Logic Compatible
• High-Accuracy Current Sense, ±30 mA at 1 A,
±4 mA at 5 mA
• Programmable Current Limit With External
Resistor, ±20% at 0.5 A
• Diagnostic Enable Function for Multiplexing of
MCU Analog or Digital Interface
• Tested According to AECQ100-12 Grade A,
1 Million Times Short to GND Test
• Electrical Transient Disturbance Immunity
Certification of ISO7637-2 and ISO16750-2
• Protection
– Overload and Short-Circuit Protection
– Inductive Load Negative Voltage Clamp
– Undervoltage Lockout (UVLO) Protection
– Thermal Shutdown/Swing With Self Recovery
– Loss of GND, Loss of Supply Protection
– Reverse Battery Protection With External
Circuitry
• Diagnostic
– On/Off State Output Open/Short to Battery
Detection
– Overload and Short to Ground Detection and
Current Limit
– Thermal Shutdown/Swing Detection
• 14-Pin Thermally-Enhanced PWP Package
2 Applications
• High-Side Power Switch for Sub-Module
• Low-Wattage Lamp Power Switch
• High-Side Relay/Solenoids
• PLC Digital Output Power Switch
• General Resistive, Inductive, and Capacitive
Loads
3 Description
The TPS1H100-Q1 is a fully protected high-side
power switch, with integrated NMOS power FET and
charge pump, targeted for the intelligent control of the
variable kinds of resistive, inductive, and capacitive
loads. Accurate current sense and programmable
current limit features differentiate it from the market.
Device Information⁽¹⁾
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TPS1H100-Q1
HTSSOP (14)
4.40 mm × 5.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
4 Typical Application Schematic
VBAT
MCU
IN
5V
ST
Version A
DIAG_EN
CS
Version B
Gate Drive and
Clamp
Logic and
Protection
Current Sense/
Current Limit
Output
Clamp
VS
OUT
Load
CL
Rgnd
GND
Dgnd
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.