TPS1120_08 Datasheet, PDF (1/15 Pages) Texas Instruments – DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
D Low r_DS(on) . . . 0.18 Ω at V_GS = – 10 V
D 3-V Compatible
D Requires No External V_CC
D TTL and CMOS Compatible Inputs
D V_GS(th) = – 1.5 V Max
D ESD Protection Up to 2 kV per
MIL-STD-883C, Method 3015
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
D PACKAGE
(TOP VIEW)
1SOURCE 1
1GATE 2
2SOURCE 3
2GATE 4
8 1DRAIN
7 1DRAIN
6 2DRAIN
5 2DRAIN
description
The TPS1120 incorporates two independent
p-channel enhancement-mode MOSFETs that
have been optimized, by means of the Texas
Instruments LinBiCMOS™ process, for 3-V or 5-V
power distribution in battery-powered systems. With a maximum V_GS(th) of – 1.5 V and an I_DSS of only 0.5 µA,
the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where
maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic
discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120
includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and
PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in
small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, T_J, from – 40°C to 150°C.
AVAILABLE OPTIONS
PACKAGED DEVICES†
CHIP FORM
TJ
SMALL OUTLINE
(Y)
(D)
– 40°C to 150°C
TPS1120D
TPS1120Y
† _{The D package is available taped and reeled. Add an R suffix to device}
type (e.g., TPS1120DR). The chip form is tested at 25°C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic
fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to
MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than
maximum-rated voltages to these high-impedance circuits.
LinBiCMS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
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