TPS1110 Datasheet, PDF (1/14 Pages) Texas Instruments – SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

TPS1110, TPS1110Y
SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS
D Low r_DS(on) . . . 65 mΩ Typ at V_GS = – 4.5 V
D High Current Capability
6 A at V_GS = – 4.5 V
D Logic-Level Gate Drive (3 V Compatible)
V_GS(th) = – 0.9 V Max
D Low Drain-Source Leakage Current
< 100 nA From 25°C to 75°C
at V_DS = – 6 V
D Fast Switching . . . 5.8 ns Typ t_d(on)
D Small-Outline Surface-Mount Power
Package
SLVS100B – OCTOBER 1994 – REVISED JANUARY 1998
D PACKAGE
(TOP VIEW)
SOURCE 1
SOURCE 2
SOURCE 3
GATE 4
8 DRAIN
7 DRAIN
6 DRAIN
5 DRAIN
description
The TPS1110 is a single, low-r_DS(on), P-channel enhancement-mode power MOS transistor. The device
features extremely low-r_DS(on) values coupled with logic-level gate-drive capability and very low drain-source
leakage current. With a maximum V_GS(th) of – 0.9 V and an I_DSS of only –100 nA, the TPS1110 is the ideal
high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing
battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been
greatly enhanced over the standard 8-pin SOIC, further making the TPS1110 ideally suited for many power
applications. For compatibility with existing designs, the TPS1110 has a pinout common with other P-channel
MOSFETs in small-outline integrated circuit (SOIC) packages. The TPS1110 is characterized for an operating
junction temperature range, T_J, from – 40°C to 150°C. The D package is available packaged in standard sleeves
or in taped and reeled formats. When ordering the tape-and-reel format, add an R suffix to the device type
number (e.g., TPS1110DR).
AVAILABLE OPTIONS
PACKAGED DEVICE†
CHIP FORM
TJ
SMALL OUTLINE
(Y)
(D)
– 40°C to 150°C
TPS1110D
TPS1110Y
† _{The D package is available taped and reeled. Add an R suffix to device}
type (e.g., TPS1110DR). The chip form is tested at 25°C.
schematic
SOURCE
1 23
GATE ⁴
5 67 8
DRAIN
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright © 1998, Texas Instruments Incorporated
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