TPIC5322L Datasheet, PDF (1/12 Pages) Texas Instruments – 3-CHANNEL INDEPENDENT LOGIC-LEVEL POWER DMOS ARRAY

TPIC5322L
3ĆCHANNEL INDEPENDENT LOGICĆLEVEL POWER DMOS ARRAY
D Low r_DS(on) . . . 0.45 Ω Typ
D High-Voltage Outputs . . . 60 V
D Pulsed Current . . . 3 A Per Channel
D Fast Commutation Speed
D Direct Logic-Level Interface
description
The TPIC5322L is a monolithic logic-level power
DMOS array that consists of three electrically
isolated independent N-channel enhancement-
mode DMOS transistors.
The TPIC5322L is offered in a standard 16-pin
small-outline surface-mount (D) package and is
characterized for operation over the case
temperature range of −40°C to 125°C.
SLIS034A − JUNE 1994 − REVISED NOVEMBER 1994
D PACKAGE
(TOP VIEW)
GND 1
SOURCE1 2
SOURCE1 3
SOURCE2 4
SOURCE2 5
SOURCE3 6
SOURCE3 7
GATE3 8
16 DRAIN1
15 DRAIN1
14 GATE1
13 DRAIN2
12 DRAIN2
11 GATE2
10 DRAIN3
9 DRAIN3
schematic
DRAIN1
15, 16
GATE2
11
DRAIN2
12, 13
GATE3
8
DRAIN3
9, 10
Q1
GATE1 ¹⁴
D1
Q2
Z1
D2
Q3
Z2
D3
Z3
2, 3
SOURCE1
1
GND
4, 5
SOURCE2
6, 7
SOURCE3
absolute maximum ratings over operating case temperature range (unless otherwise noted)^†
Drain-to-source voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous drain current, each output, all outputs on, T_C = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Continuous source-to-drain diode current, T_C = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Pulsed drain current, each output, I_max, T_C = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 3 A
Single-pulse avalanche energy, E_AS, T_C = 25°C (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40.5 mJ
Continuous total power dissipation at (or below) T_C = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09 W
Operating virtual junction temperature range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, T_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† _{Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and}
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms and duty cycle = 2%.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright  1994, Texas Instruments Incorporated
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
1