TPIC5302D Datasheet, PDF (1/12 Pages) Texas Instruments – 3-CHANNEL INDEPENDENT POWER DMOS ARRAY

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TPIC5302
3ĆCHANNEL INDEPENDENT POWER DMOS ARRAY
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SLIS029B − APRIL 1994 − REVISED SEPTEMBER 1995
• Low r_DS(on) . . . 0.3 Ω Typ
• High-Voltage Outputs . . . 60 V
• Pulsed Current . . . 7 A Per Channel
• Fast Commutation Speed
description
The TPIC5302 is a monolithic power DMOS array
that consists of three electrically isolated
independent N-channel enhancement-mode
DMOS transistors. The TPIC5302 is offered in a
standard 16-pin small-outline surface-mount (D)
package.
D PACKAGE
(TOP VIEW)
GND 1
SOURCE1 2
SOURCE1 3
SOURCE2 4
SOURCE2 5
SOURCE3 6
SOURCE3 7
GATE3 8
16 DRAIN1
15 DRAIN1
14 GATE1
13 DRAIN2
12 DRAIN2
11 GATE2
10 DRAIN3
9 DRAIN3
The TPIC5302 is characterized for operation over
the case temperature range of − 40°C to 125°C.
schematic
DRAIN1
15, 16
GATE2
11
DRAIN2
12, 13
GATE3
8
DRAIN3
9, 10
Q1
GATE1 ¹⁴
D1
Q2
Z1
D2
Q3
Z2
D3
Z3
2, 3
SOURCE1
1
GND
4, 5
SOURCE2
6, 7
SOURCE3
absolute maximum ratings over operating case temperature range (unless otherwise noted)^†
Drain-to-source voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous drain current, each output, all outputs on, T_C = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4 A
Continuous source-to-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4 A
Pulsed drain current, each output, T_C = 25°C (see Note 1 and Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 A
Single-pulse avalanche energy, E_AS, T_C = 25°C (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5 mJ
Continuous total power dissipation at (or below) T_C = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1087 mW
Operating virtual junction temperature range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, T_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† _{Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and}
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms and duty cycle = 2%
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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• POST OFFICE BOX 1443 HOUSTON, TEXAS
77251−1443
Copyright  1995, Texas Instruments Incorporated
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