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TPD4E6B06 Datasheet, PDF (1/15 Pages) Texas Instruments – 4-CH Bidirectional Low Capacitance ESD Protection Device
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TPD4E6B06
SLVSCK3A – MAY 2014 – REVISED DECEMBER 2015
TPD4E6B06 4-CH Bidirectional Low Capacitance ESD Protection Device With 15-kV
Contact and Ultra-Low Clamping Voltage
1 Features
•1 IEC 61000-4-2 Level 4
– ±15 kV (Contact Discharge)
– ±15 kV (Air Gap Discharge)
• IEC 61000-4-5 (Surge): 3 A (8/20 µs)
• IO Capacitance: 4.8 pF (Typ)
• RDYN: 0.75 Ω (Typ)
• DC Breakdown Voltage: ±6 V (Min)
• Ultra Low Leakage Current: 100 nA (Max)
• Clamping Voltage: 10 V (Max at IPP = 1 A)
• Industrial Temperature Range: –40°C to 125°C
• Space Saving DPW Package (0.8 mm × 0.8 mm)
2 Applications
• Audio Lines
– Microphone
– Earphone
– Speakerphone
• SD Interface
• SIM Interface
• Mobile Keyboard or Other Buttons
• Cell Phones
• eBook
• Portable Media Players
• Digital Camera
• Tablet PC
• Wearables
3 Description
The TPD4E6B06 is a four channel electrostatic
discharge (ESD) protection device in an ultra small
DPW package. It is the industry’s smallest 4-CH
transient voltage suppressor (TVS) diode with a 0.48-
mm pitch. This larger pitch helps save on printed-
circuit board (PCB) manufacturing costs. The device
provides IEC61000-4-2 compliance up to 15-kV
contact discharge. It has an ESD clamp circuit with
back-to-back diodes for bipolar/bidirectional signal
support. The 4.8-pF (typ) line capacitance is suitable
for a wide range of applications supporting data rates
up to 700 MHz.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TPD4E6B06
X2SON (4)
0.80 mm × 0.80 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
1
2
Pinout
1
2
GND
4
3
GND
4
3
0.8 mm x 0.8mm X2SON Package
(Bottom View)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.