TMS626812A Datasheet, PDF (1/40 Pages) Texas Instruments – SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY

TMS626812A
1 048 576 BY 8ĆBIT BY 2ĆBANK
SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY
SMOS691B − JULY 1997 − REVISED APRIL 1998
D Organization
1M Words × 8 Bits × 2 Banks
D 3.3-V Power Supply (± 10% Tolerance)
D Two Banks for On-Chip Interleaving
(Gapless Accesses)
D High Bandwidth − Up to 100-MHz Data
Rates
D CAS Latency (CL) Programmable to
2 or 3 Cycles From Column-Address Entry
D Burst Sequence Programmable to Serial or
Interleave
D Burst Length Programmable to 1, 2, 4, or 8
D Chip Select and Clock Enable for
Enhanced-System Interfacing
D Cycle-by-Cycle DQ-Bus Mask Capability
D Auto-Refresh and Self-Refresh Capabilities
D 4K Refresh (Total for Both Banks)
D High-Speed, Low-Noise, Low-Voltage TTL
(LVTTL) Interface
D Power-Down Mode
D Compatible With JEDEC Standards
D Pipeline Architecture
D Temperature Ranges
Operating, 0°C to 70°C
Storage, − 55°C to 150°C
D Performance Ranges:
’626812A-10
SYNCHRONOUS
CLOCK
CYCLE TIME
tCK3
tCK2
(CL† = 3) (CL = 2)
10 ns
15 ns
ACCESS TIME
(CLOCK TO
OUTPUT)
tAC3
tAC2
(CL = 3) (CL = 2)
7 ns
7 ns
REFRESH
TIME
INTERVAL
64 ms
† _{CL = CAS latency}
description
The TMS626812A is a high-speed, 16777 216-bit
synchronous dynamic random-access memory
(SDRAM) device organized as:
D Two banks of 1 048 576 words with 8 bits per
word
TMS626812A
DGE PACKAGE
( TOP VIEW )
VCC 1
DQ0 2
VSSQ 3
DQ1 4
VCCQ 5
DQ2 6
VSSQ 7
DQ3 8
VCCQ 9
NC 10
NC 11
W 12
CAS 13
RAS 14
CS 15
A11 16
A10 17
A0 18
A1 19
A2 20
A3 21
VCC 22
44 VSS
43 DQ7
42 VSSQ
41 DQ6
40 VCCQ
39 DQ5
38 VSSQ
37 DQ4
36 VCCQ
35 NC
34 NC
33 DQM
32 CLK
31 CKE
30 NC
29 A9
28 A8
27 A7
26 A6
25 A5
24 A4
23 VSS
A[0: 10]
A11
CAS
CKE
CLK
CS
DQ[0:7]
DQM
NC
RAS
VCC
VCCQ
VSS
VSSQ
W
PIN NOMENCLATURE
Address Inputs
A0 −A10 Row Addresses
A0 −A8 Column Addresses
A10 Automatic-Precharge Select
Bank Select
Column-Address Strobe
Clock Enable
System Clock
Chip Select
SDRAM Data Input / Output
Data-Input / Data-Output Mask Enable
No External Connect
Row-Address Strobe
Power Supply (3.3-V Typical)
Power Supply for Output Drivers
(3.3-V Typical)
Ground
Ground for Output Drivers
Write Enable
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright  1998, Texas Instruments Incorporated
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