TMS417809A Datasheet, PDF (1/29 Pages) Texas Instruments – 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES

TMS417809A, TMS427809A, TMS427809AP
2097152 BY 8-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS894B – AUGUST 1996 – REVISED NOVEMBER 1997
This data sheet is applicable to all
TMS417809As and TMS427809A/Ps
symbolized by Revision “E” and subsequent
revisions as described in the device
symbolization section.
D Organization . . . 2 097152 by 8 Bits
D Single Power Supply (5 V or 3.3 V)
D Performance Ranges:
’417809A-50
’417809A-60
ACCESS ACCESS ACCESS
TIME TIME TIME
tRAC
MAX
tCAC
MAX
tAA
MAX
50 ns 13 ns 25 ns
60 ns 15 ns 30 ns
EDO
CYCLE
tHPC
MIN
20 ns
25 ns
’417809A-70
70 ns
’427809A/P-50 50 ns
18 ns
13 ns
35 ns
25 ns
30 ns
20 ns
’427809A/P-60 60 ns 15 ns 30 ns
25 ns
’427809A/P-70 70 ns 18 ns 35 ns
30 ns
D Extended-Data-Out (EDO) Operation
D CAS-Before-RAS ( CBR) Refresh
D Long Refresh Period and Self-Refresh
Option (TMS427809AP)
D High-Impedance State Unlatched Output
D High-Reliability Plastic 28-Lead
400-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package (DZ Suffix) and
28-Lead 400-Mil-Wide Surface-Mount Thin
Small-Outline Package (TSOP) (DGC Suffix)
D Ambient Temperature Range
0°C to 70°C
DZ / DGC PACKAGE
( TOP VIEW )
V_CC 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
W6
RAS 7
NC 8
A10 9
A0 10
A1 11
A2 12
A3 13
V_CC 14
28 V_SS
27 DQ7
26 DQ6
25 DQ5
24 DQ4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 V_SS
A[0 :10]
DQ[0: 7]
CAS
NC
OE
RAS
VCC
VSS
W
PIN NOMENCLATURE
Address Inputs
Data In / Data Out
Column-Address Strobe
No Internal Connection
Output Enable
Row-Address Strobe
3.3-V or 5-V Supply
Ground
Write Enable
description
The TMS417809A and TMS427809A series are
16 777 216-bit dynamic random access memory
(DRAM) devices organized as 2 097 152 words of
8 bits each. The TMS427809AP series is a
low-power, self-refresh, 16 777 216-bit DRAM
organized as 4 194 304 words of four bits.They
employ TI state-of-the-art technology for high
performance, reliability, and low power.
AVAILABLE OPTIONS
DEVICE
POWER
SUPPLY
REFRESH
CYCLES
TMS417809A
5V
2 048 in 32 ms
TMS427809A
3.3 V
2 048 in 32 ms
TMS427809AP
3.3 V
2 048 in 128 ms
These devices feature maximum RAS access times of 50-, 60-, and 70 ns. All address and data-in lines are
latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.
The TMS417809A is offered in a 28-lead plastic surface-mount SOJ package (DZ suffix). The TMS427809A / P
is offered in a 28-lead plastic surface-mount TSOP package (DGC suffix). These packages are designed for
operation from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
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