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TM893NBM36A Datasheet, PDF (1/11 Pages) Texas Instruments – DYNAMIC RANDOM-ACCESS MEMORY MODULES
TM497MBM36A, TM497MBM36Q 4194304 BY 36-BIT
TM893NBM36A, TM893NBM36Q 8388608 BY 36-BIT
DYNAMIC RANDOM-ACCESS MEMORY MODULES
SMMS653B – MAY 1995 – REVISED JULY 1995
D Organization
TM497MBM36A . . . 4 194 304 × 36
TM893NBM36A . . . 8 388608 × 36
D Single 5-V Power Supply (±10% Tolerance)
D 72-Pin Leadless Single In-Line Memory
Module (SIMM) for Use With Sockets
D TM497MBM36A – Utilizes Eight 16-Megabit
and Four 4-Megabit DRAMs in Plastic
Small-Outline J-Lead (SOJ) Packages
D TM893NBM36A – Utilizes Sixteen
16-Megabit and Eight 4-Megabit DRAMs in
Plastic Small-Outline J-Lead (SOJ)
Packages
D Long Refresh Period
32 ms (2 048 Cycles)
D All Inputs, Outputs, Clocks Fully
TTL-Compatible
D 3-State Output
D Common CAS Control for Nine Common
Data-In and Data-Out Lines in Four Blocks
D Enhanced Page-Mode Operation With
CAS-Before-RAS ( CBR), RAS-Only, and
Hidden Refresh
D Present Detect
D Operating Free-Air Temperature Range
0°C to 70°C
D Performance Ranges:
ACCESS
TIME
tRAC
ACCESS ACCESS READ
TIME TIME OR
tAA
tCAC WRITE
CYCLE
(MAX)
’497MBM36A-60 60 ns
’497MBM36A-70 70 ns
’497MBM36A-80 80 ns
(MAX)
30 ns
35 ns
40 ns
(MAX)
15 ns
18 ns
20 ns
(MIN)
110 ns
130 ns
150 ns
’893NBM36A-60 60 ns
30 ns 15 ns
’893NBM36A-70 70 ns
35 ns 18 ns
’893NBM36A-80 80 ns
40 ns 20 ns
D Gold-Tabbed Versions Available:†
110 ns
130 ns
150 ns
TM497MBM36A
TM893NBM36A
D Tin-Lead (Solder)-Tabbed Versions
Available:
TM497MBM36Q
TM893NBM36Q
description
TM497MBM36A
The TM497MBM36A is a 16-megabyte dynamic random-access memory ( DRAM) organized as four times
4 194 304 × 9 (bit 9 is generally used for parity) in a 72-pin leadless single in-line memory module (SIMM). The
SIMM is composed of eight TMS417400DJ 4 194 304 × 4-bit DRAMs, each in a 24 / 26-lead plastic small-outline
J-lead (SOJ) package, and four TMS44100DJ 4 194 304 × 1-bit DRAMs, each in a 20 / 26-lead plastic SOJ
package mounted on a substrate with decoupling capacitors. The TMS417400DJ and TMS44100DJ are
described in the TMS417400 and TMS44100 data sheets, respectively. The TM497MBM36A SIMM is available
in the single-sided, BM leadless module for use with sockets.
TM893NBM36A
The TM893NBM36A is a 32-megabyte DRAM organized as four times 8 388 608 × 9 (bit 9 is generally used for
parity) in a 72-pin leadless SIMM. The SIMM is composed of sixteen TMS417400DJ 4 194 304 × 4-bit DRAMs,
each in a 24 / 26-lead plastic SOJ package, and eight TMS44100DJ 4 194 304 × 1-bit DRAMs, each in a
20 / 26-lead plastic SOJ package, mounted on a substrate with decoupling capacitors. The TMS417400DJ and
TMS44100DJ are described in the TMS417400 and TMS44100 data sheets, respectively. The TM893NBM36A
SIMM is available in the double-sided, BM leadless module for use with sockets.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
† Part numbers in this data sheet refer only to the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
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