TM497FBK32H Datasheet, PDF (1/13 Pages) Texas Instruments – EXTENDED-DATA-OUT DYNAMIC RAM MODULES

TM497FBK32H, TM497FBK32I 4194304 BY 32ĆBIT
TM893GBK32H, TM893GBK32I 8ā388ā608 BY 32ĆBIT
EXTENDEDĆDATAĆOUT DYNAMIC RAM MODULES
SMMS674A − MARCH 1997 − REVISED SEPTEMBER 1997
D Organization
− TM497FBK32H/I: 4 194 304 x 32
− TM893GBK32H/I: 8Ă388Ă608 x 32
D Single 5-V Power Supply (±10% Tolerance)
D 72-Pin Single-In-Line Memory Module
(SIMM) for Use With Sockets
D TM497FBK32H/I − Uses Eight 16M-Bit
Dynamic Random-Access Memories
(DRAMs) in Plastic Small-Outline J-Lead
(SOJ) Packages
D TM893GBK32H/I − Uses Sixteen 16M-Bit
DRAMs in Plastic SOJ Packages
D Long Refresh Period
32 ms (2Ă048 Cycles)
D All Inputs, Outputs, Clocks Fully
TTL-Compatible
D 3-State Output
D Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
D Extended Data Out (EDO) Operation With
CAS-Before-RAS ( CBR), RAS-Only, and
Hidden Refresh
D Presence Detect
D Performance Ranges:
ACCESS ACCESS ACCESS
TIME TIME TIME
tRAC
(MAX)
tAA
(MAX)
tCAC
(MAX)
EDO
CYCLE
tHPC
(MIN)
’497FBK32H/I-50 50 ns 25 ns 13 ns 20 ns
’497FBK32H/I-60 60 ns 30 ns 15 ns 25 ns
’497FBK32H/I-70 70 ns 35 ns 18 ns 30 ns
’893GBK32H/I-50 50 ns 25 ns 13 ns 20 ns
’893GBK32H/I-60 60 ns 30 ns 15 ns 25 ns
’893GBK32H/I-70 70 ns 35 ns
D Low Power Dissipation
18 ns 30 ns
D Operating Free-Air Temperature Range
0°C to 70°C
D Gold-Tabbed Version Available:^†
TM497FBK32H, TM893GBK32H
D Tin-Lead (Solder-) Tabbed Version
Available: TM497FBK32I, TM893GBK32I
description
The TM497FBK32H/I is a 16M-byte dynamic random-access memory (DRAM) module organized as four times
4 194 304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight
TMS417409ADJ DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages mounted on a
substrate with decoupling capacitors. The TMS417409ADJ is described in the TMS416409A, TMS417409A
data sheet (literature number SMKS893).
The TM497FBK32H/I SIMM is available in the single-sided BK leadless module for use with sockets. The
TM497FBK32H/I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation
from 0°C to 70°C.
The TM893GBK32H/I is a 32M-byte DRAM organized as four times 8388 608 × 8 bits in a 72-pin leadless SIMM.
The SIMM is composed of sixteen TMS417409ADJ DRAMs.
The TM893GBK32H/I SIMM is available in the double-sided BK leadless module for use with sockets. The
TM893GBK32H/I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation
from 0°C to 70°C.
operation
The TM497FBK32H/I operates as eight TMS417409ADJs connected as shown in Figure 1 and in Table 1. The
common I/O feature dictates the use of early write cycles to prevent contention on D and Q.
The TM893GBK32H/I operates as sixteen TMS417409ADJs connected as shown in Figure 2 and in Table 2.
The common I/O feature dictates the use of early write cycles to prevent contention on D and Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright  1997, Texas Instruments Incorporated
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