TM497FBK32G Datasheet, PDF (1/12 Pages) Texas Instruments – EXTENDED DATA OUT DYNAMIC RAM MODULES

TM497FBK32R, TM497FBK32G 4194304 BY 32-BIT
TM893GBK32R, TM893GBK32G 8388608 BY 32-BIT
EXTENDED DATA OUT DYNAMIC RAM MODULES
SMMS672 – FEBRUARY 1997
D Organization
– TM497FBK32R/G: 4 194 304 x 32
– TM893GBK32R/G: 8 388 608 x 32
D Single 5-V Power Supply (±10% Tolerance)
D 72-Pin Single-In-Line Memory Module
(SIMM) for Use With Sockets
D TM497FBK32R/G – Uses Eight 16M-Bit
Dynamic Random-Access Memories
(DRAMs) in Plastic Small-Outline J-Lead
(SOJ) Packages
D TM893GBK32R/G – Uses Sixteen 16M-Bit
DRAMs in Plastic SOJ Packages
D Long Refresh Period
32 ms (2 048 Cycles)
D All Inputs, Outputs, Clocks Fully
TTL-Compatible
D 3-State Output
D Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
D Extended Data Out (EDO) Operation With
CAS-Before-RAS ( CBR), RAS-Only, and
Hidden Refresh
D Presence Detect
D Performance Ranges:
ACCESS
TIME
tRAC
(MAX)
ACCESS ACCESS EDO
TIME TIME CYCLE
tAA
tCAC tHPC
(MAX) (MAX) (MIN)
’497FBK32R/G-50 50 ns 40 ns 20 ns 35 ns
’497FBK32R/G-60 60 ns 30 ns 15 ns 25 ns
’497FBK32R/G-70 70 ns 35 ns 18 ns 30 ns
’893GBK32R/G-50 50 ns 40 ns 20 ns 35 ns
’893GBK32R/G-60 60 ns 30 ns 15 ns 25 ns
’893GBK32R/G-70 70 ns 35 ns 18 ns 30 ns
D Low Power Dissipation
D Operating Free-Air Temperature Range
0°C to 70°C
D Gold-Tabbed Version Available:^†
TM497FBK32G, TM893GBK32G
D Tin-Lead (Solder-) Tabbed Version
Available: TM497FBK32R, TM893GBK32R
description
The TM497FBK32R/G, designed as 4 × 4 194 304 × 8-bits, is a 16M-byte, 72-pin, leadless, single-in-line
memory module (SIMM). The SIMM is composed of eight (8) TMS417409DJs, 4 194 304 × 4-bit DRAMs, each
in 24/26-lead, plastic, small-outline J-lead (SOJ) packages mounted on a substrate with decoupling capacitors.
See the TMS417409A data sheet (literature number SMKS893) for timing diagrams.
The TM497FBK32R/G SIMM is available in the single-sided BK leadless module for use with sockets. The
TM497FBK32R/G features RAS access times of 50, 60, and 70 ns. This device is designed for operation from
0°C to 70°C.
The TM893GBK32R/G, designed as 4 × 8 388 608 × 8-bits, is a 32M-byte, 72-pin, leadless SIMM. The SIMM
is composed of sixteen TMS417409DJs, 4 194 304 × 4-bit DRAMs, each in 24/26-lead, plastic, small-outline
J-lead (SOJ) packages mounted on a substrate with decoupling capacitors. See the TMS417409A data sheet
(literature number SMKS893) for timing diagrams.
The TM893GBK32R/G SIMM is available in the double-sided BK leadless module for use with sockets. The
TM893GBK32R/G features RAS access times of 50, 60, and 70 ns. This device is characterized for operation
from 0°C to 70°C.
operation
The TM497FBK32R / G operates as eight TMS417409DJs connected as shown in the functional block diagram
of TM497RBK32R/G and in Table 1. The common I/O feature dictates the use of early write cycles to prevent
contention on D and Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
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