TM497BBK32H Datasheet, PDF (1/12 Pages) Texas Instruments – DYNAMIC RAM MODULES

TM497BBK32H, TM497BBK32I 4194304 BY 32-BIT
TM893CBK32H, TM893CBK32I 8388608 BY 32-BIT
DYNAMIC RAM MODULES
SMMS675A – MARCH 1997 – REVISED APRIL 1997
D Organization
– TM497BBK32H / I: 4 194 304 x 32
– TM893CBK32H / I: 8 388 608 x 32
D Single 5-V Power Supply (±10% Tolerance)
D 72-Pin Single-In-Line Memory Module
(SIMM) for Use With Sockets
D TM497BBK32H/ I – Uses Eight 16M-Bit
Dynamic Random-Access Memory (DRAM)
Devices in Plastic Small-Outline J-Lead
(SOJ) Packages
D TM893CBK32H/ I – Uses Sixteen 16M-Bit
DRAMs in Plastic SOJ Packages
D Long Refresh Period
32 ms (2 048 Cycles)
D All Inputs, Outputs, Clocks Fully
TTL-Compatible
D 3-State Output
D Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
D Enhanced Page Mode Operation With
CAS-Before-RAS ( CBR), RAS-Only, and
Hidden Refresh
D Presence Detect
D Performance Ranges:
ACCESS ACCESS ACCESS READ
TIME
tRAC
TIME
tAA
TIME
tCAC
OR
WRITE
CYCLE
(MAX) (MAX) (MAX) (MIN)
’497BBK32H / I-50 50 ns 25 ns 13 ns 90 ns
’497BBK32H / I-60 60 ns 30 ns 15 ns 110 ns
’497BBK32H / I-70 70 ns 35 ns 18 ns 130 ns
’893CBK32H / I-50 50 ns 25 ns 13 ns 90 ns
’893CBK32H / I-60 60 ns 30 ns 15 ns 110 ns
’893CBK32H / I-70 70 ns 35 ns 18 ns 130 ns
D Low Power Dissipation
D Operating Free-Air Temperature Range
0°C to 70°C
D Gold-Tabbed Version Available:^†
TM497BBK32H, TM893CBK32H
D Tin-Lead (Solder-) Tabbed Version
Available: TM497BBK32I, TM893CBK32I
description
The TM497BBK32H/I is a 16M-byte dynamic random-access memory (DRAM) device organized as 4 ×
4 194 304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight
TMS417400ADJ, 4 194 304 × 4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages
mounted on a substrate with decoupling capacitors. The TMS417400ADJ is described in the TMS417400A data
sheet (literature number SMKS889).
The TM497BBK32H/I SIMM is available in the single-sided BK leadless module for use with sockets. The
TM497BBK32H/ I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation
from 0°C to 70°C.
The TM893CBK32H / I is a 32M-byte DRAM organized as 4 8 388 608 × 8 bits in a 72-pin leadless SIMM. The
SIMM is composed of sixteen TMS417400ADJ, 4 194 304 × 4-bit DRAMs.
The TM893CBK32H / I SIMM is available in the double-sided BK leadless module for use with sockets. The
TM893CBK32H/ I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation
from 0°C to 70°C.
operation
The TM497BBK32H / I operates as eight TMS417400ADJs connected as shown in the functional block diagram
and in Table 1. The common I/O feature dictates the use of early write cycles to prevent contention on D and
Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
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