TM124MBK36F Datasheet, PDF (1/9 Pages) Texas Instruments – 36-BIT DRAM MODULE

TM124MBK36F, TM124MBK36U 1048576 BY 36-BIT DRAM MODULE
TM248NBK36F, TM248NBK36U 2097152 BY 36-BIT DRAM MODULE
D Organization
TM124MBK36F . . . 1 048 576 × 36
TM248NBK36F . . . 2 097 152 × 36
D Single 5-V Power Supply (±10% Tolerance)
D 72-Pin Single-In-Line Memory Module
(SIMM) for Use With Socket
D TM124MBK36F – Utilizes Two 16-Megabit
and One 4-Megabit DRAMs in Plastic
Small-Outline J-Lead (SOJ) Packages
D TM248NBK36F – Utilizes Four 16-Megabit
and Two 4-Megabit DRAMs in Plastic
Small-Outline J-Lead (SOJ) Packages
D Long Refresh Period . . . 16 ms
(1024 Cycles)
D All Inputs, Outputs, Clocks Fully TTL
Compatible
D 3-State Output
D Common CAS Control for Nine Common
Data-In and Data-Out Lines in Four Blocks
D Enhanced Page-Mode Operation With
CAS-Before-RAS ( CBR), RAS-Only, and
Hidden Refresh
description
SMMS650A – APRIL 1995 – REVISED JUNE 1995
D Presence Detect
D Performance Ranges:
ACCESS
TIME
tRAC
(MAX)
ACCESS ACCESS READ
TIME TIME OR
tAA
tCAC WRITE
CYCLE
(MAX) (MAX) (MIN)
’124MBK36F-60 60 ns
30 ns 15 ns 110 ns
’124MBK36F-70 70 ns
35 ns 18 ns 130 ns
’124MBK36F-80 80 ns
40 ns 20 ns 150 ns
’248NBK36F-60 60 ns
30 ns 15 ns 110 ns
’248NBK36F-70 70 ns
35 ns 18 ns 130 ns
’248NBK36F-80 80 ns
40 ns
D Low Power Dissipation
20 ns 150 ns
D Operating Free-Air Temperature Range:
0°C to 70°C
D Gold-Tabbed Versions Available:^†
– TM124MBK36F
– TM248NBK36F
D Tin-Lead (Solder) Tabbed Versions
Available:
– TM124MBK36U
– TM248NBK36U
TM124MBK36F
The TM124MBK36F is a 4-MByte dynamic random-access memory (DRAM) organized as four times
1 048 576 × 9 in a 72-pin single-in-line memory module (SIMM). The SIMM is composed of two TMS418160DZ,
1 048 576 × 16-bit dynamic RAMs, each in a 42-lead plastic small-outline J-lead ( SOJ) package and one
TMS44460DJ, 1 048 576 × 4-bit DRAM in a 24 / 26-lead plastic small-outline J-lead ( SOJ) package mounted on
a substrate with decoupling capacitors. The TMS418160DZ and TMS44460DJ are described in the
TMS418160 and TMS44460 data sheets, respectively. The TM124MBK36F SIMM is available in the
single-sided BK leadless module for use with sockets.
TM248NBK36F
The TM248NBK36F is an 8-MByte DRAM organized as four times 2 097 152 × 9 in a 72-pin single-in-line
memory module (SIMM). The SIMM is composed of four TMS418160DZ, 1 048 576 × 16-bit dynamic RAMs,
each in a 42-lead plastic small-outline J-lead ( SOJ) package and two TMS44460DJ, 1 048 576 × 4-bit DRAMs,
each in a 24 / 26-lead plastic small-outline (SOJ) package mounted on a substrate with decoupling capacitors.
The TMS418160DZ and TMS44460DJ are described in the TMS418160 and TMS44460 data sheets,
respectively. The TM248NBK36F SIMM is available in the double-sided BK leadless module for use with
sockets.
operation
The TM124MBK36F operates as two TMS418160DZs and one TMS44460DJ connected as shown in the
functional block diagram and NO TAG. The TM248NBK36F operates as four TMS418160DZs and two
TMS44460DJs connected as shown in the functional block diagram and NO TAG. The common I / O feature
dictates the use of early write cycles to prevent contention on D and Q.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
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