TM124FBK32H Datasheet, PDF (1/9 Pages) Texas Instruments – DYNAMIC RAM MODULES

TM124FBK32H, TM124FBK32I 1048576 BY 32-BIT
TM248GBK32H, TM248GBK32I 2097152 BY 32-BIT
DYNAMIC RAM MODULES
SMMS678 – APRIL 1997
D Organization
TM124FBK32H/ I . . . 1 048 576 × 32
TM248GBK32H/ I . . . 2 097 152 × 32
D Single 5-V Power Supply (±10% Tolerance)
D 72-Pin Single In-Line Memory Module
(SIMM) for Use With Socket
D TM124FBK32H/ I – Uses Two 16M-Bit
Dynamic Random-Access Memories
(DRAMs) in Plastic Small-Outline J-Lead
(SOJ) Package
D TM248GBK32H/ I – Uses Four 16M-Bit
DRAMs in Plastic SOJ Package
D Long Refresh Period
16 ms (1 024 Cycles)
D All Inputs, Outputs, Clocks Fully
TTL-Compatible
D 3-State Output
D Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
D Extended Data Out (EDO) Operation With
CAS-Before-RAS ( CBR), RAS-Only, Hidden
Refresh, and Self Refresh
D Presence Detect
D JEDEC First Generation 72-Pin SIMM
Pinout
D Performance Ranges:
ACCESS ACCESS ACCESS EDO
TIME TIME TIME CYCLE
tRAC
tAA
tCAC tHPC
(MAX) (MAX) (MAX) (MIN)
’124FBK32H / I-50 50 ns 25 ns 13 ns 20 ns
’124FBK32H / I-60 60 ns 30 ns 15 ns 25 ns
’124FBK32H / I-70 70 ns 35 ns 18 ns 30 ns
’248GBK32H / I-50 50 ns 25 ns 13 ns 20 ns
’248GBK32H / I-60 60 ns 30 ns 15 ns 25 ns
’248GBK32H / I-70 70 ns 35 ns
D Low Power Dissipation
18 ns 30 ns
D Operating Free-Air Temperature Range
0°C to 70°C
D Gold-Tabbed Versions Available: ^†
TM124FBK32H
TM248GBK32H
D Tin-Lead Solder-Tabbed Versions Available:
TM124FBK32I
TM248GBK32I
description
TM124FBK32H/ I
The TM124FBK32H / I is a 4M-byte DRAM organized as four times 1 048 576 × 8 in a 72-pin SIMM. The SIMM
is composed of two TMS418169ADZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package
mounted on a substrate with decoupling capacitors. The TMS418169ADZ is described in the TMS418169A data
sheet (literature number SMKS892). The TM124FBK32H / I SIMM is available in the single-sided BK-leadless
module for use with sockets.
TM248GBK32H/ I
The TM248GBK32H / I is an 8M-byte DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM
is composed of four TMS418169ADZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package
mounted on a substrate with decoupling capacitors. The TMS418169ADZ is described in the TMS418169A data
sheet (literature number SMKS892). The TM248GBK32H / I SIMM is available in the double-sided BK-leadless
module for use with sockets.
operation
The TM124FBK32H / I operates as two TMS418169ADZs connected as shown in the functional block diagram
and in Table 1. The TM248GBK32H / I operates as four TMS418169ADZs connected as shown in the functional
block diagram and in Table 1. The common I / O feature dictates the use of early-write cycles to prevent
contention on D and Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright  1997, Texas Instruments Incorporated
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