TM124FBK32F Datasheet, PDF (1/9 Pages) Texas Instruments – DYNAMIC RAM MODULE

TM124FBK32F, TM124FBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE
TM248GBK32F, TM248GBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE
D Organization
TM124FBK32F . . . 1 048 576 × 32
TM248GBK32F . . . 2 097 152 × 32
D Single 5-V Power Supply (±10% Tolerance)
D 72-Pin Single In-Line Memory Module
(SIMM) for Use With Socket
D TM124FBK32F – Utilizes Two 16M-Bit
Dynamic Random-Access Memories
(DRAMs) in Plastic Small-Outline J-Lead
(SOJ) Package
D TM248GBK32F – Utilizes Four 16M-Bit
DRAMs in Plastic SOJ Package
D Long Refresh Period
16 ms (1 024 Cycles)
D All Inputs, Outputs, Clocks Fully
TTL-Compatible
D 3-State Output
D Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
D Extended Data Out (EDO) Operation With
CAS-Before-RAS ( CBR), RAS-Only, Hidden
Refresh, and Self Refresh
SMMS660 – MARCH 1996
D Presence Detect
D JEDEC First Generation 72-Pin SIMM
Pinout
D Performance Ranges:
ACCESS
TIME
tRAC
(MAX)
ACCESS ACCESS EDO
TIME TIME CYCLE
tAA
tCAC tHPC
(MAX) (MAX) (MIN)
’124FBK32F-60 60 ns
30 ns 15 ns 25 ns
’124FBK32F-70 70 ns
35 ns 18 ns 30 ns
’124FBK32F-80 80 ns
40 ns 20 ns 35 ns
’248GBK32F-60 60 ns
30 ns 15 ns 25 ns
’248GBK32F-70 70 ns
35 ns 18 ns 30 ns
’248GBK32F-80 80 ns
40 ns
D Low Power Dissipation
20 ns 35 ns
D Operating Free-Air Temperature Range
0°C to 70°C
D Gold-Tabbed Versions Available: ^†
TM124FBK32F
TM248GBK32F
D Tin-Lead Solder-Tabbed Versions Available:
TM124FBK32U
TM248GBK32U
description
TM124FBK32F
The TM124FBK32F is a 4M-byte DRAM organized as four times 1 048 576 × 8 in a 72-pin SIMM. The SIMM is
composed of two TMS418169DZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package mounted
on a substrate with decoupling capacitors. The TMS418169DZ is described in the TMS418169 data sheet
(literature number SMKS886). The TM124FBK32F SIMM is available in the single-sided BK-leadless module
for use with sockets.
TM248GBK32F
The TM248GBK32F is an 8M-byte DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM
is composed of four TMS418169DZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package mounted
on a substrate with decoupling capacitors. The TMS418169DZ is described in the TMS418169 data sheet
(literature number SMKS886). The TM248GBK32F SIMM is available in the double-sided BK-leadless module
for use with sockets.
operation
The TM124FBK32F operates as two TMS418169DZs connected as shown in the functional block diagram and
in Table 1. The TM248GBK32F operates as four TMS418169DZs connected as shown in the functional block
diagram and in Table 1. The common I / O feature dictates the use of early-write cycles to prevent contention
on D and Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1996, Texas Instruments Incorporated
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
1