TM124BBK32H Datasheet, PDF (1/9 Pages) Texas Instruments – DYNAMIC RAM MODULES

TM124BBK32H, TM124BBK32I 1048576 BY 32-BIT
TM248CBK32H, TM248CBK32I 2097152 BY 32-BIT
DYNAMIC RAM MODULES
SMMS679 – MARCH 1997
D Organization
TM124BBK32H/ I . . . 1 048 576 × 32
TM248CBK32H/ I . . . 2 097 152 × 32
D Single 5-V Power Supply (±10% Tolerance)
D 72-Pin Single In-Line Memory Module
(SIMM) for Use With Socket
D TM124BBK32H/ I – Uses Two 16M-Bit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
D TM248CBK32H/ I – Uses Four 16M-Bit
DRAMs in Plastic SOJ Packages
D Long Refresh Period
16 ms (1 024 Cycles)
D All Inputs, Outputs, Clocks Fully
TTL-Compatible
D 3-State Output
D Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
D Enhanced Page-Mode Operation With
CAS-Before-RAS ( CBR), RAS-Only, and
Hidden Refresh
D Presence Detect
D Performance Ranges:
ACCESS ACCESS ACCESS READ
TIME
TIME TIME OR
tRAC
tAA
tCAC WRITE
CYCLE
(MAX) (MAX) (MAX) (MIN)
’124BBK32H / I-50 50 ns 25 ns 13 ns 90 ns
’124BBK32H / I-60 60 ns 30 ns 15 ns 110 ns
’124BBK32H / I-70 70 ns 35 ns 18 ns 130 ns
’248CBK32H / I-50 50 ns 25 ns 13 ns 90 ns
’248CBK32H / I-60 60 ns 30 ns 15 ns 110 ns
’248CBK32H / I-70 70 ns 35 ns
D Low Power Dissipation
18 ns 130 ns
D Operating Free-Air Temperature Range
0°C to 70°C
D Gold-Tabbed Versions Available:^†
TM124BBK32H
TM248CBK32H
D Tin-Lead (Solder) Tabbed Versions
Available:
TM124BBK32I
TM248CBK32I
description
TM124BBK32H/ I
The TM124BBK32H / I is a 32M-bit dynamic random-access memory (DRAM) module organized as four times
1 048 576 × 8 in a 72-pin SIMM. The SIMM is composed of two TMS418160ADZ, 1 048 576 × 16-bit DRAMs,
each in a 42-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The
TMS418160ADZ is described in the TMS418160A data sheet (literature number SMKS891). The
TM124BBK32H/ I SIMM is available in the single-sided BK-leadless module for use with sockets.
TM248CBK32H/ I
The TM248CBK32H / I is a 64M-bit DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM
is composed of four TMS418160ADZ, 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package
mounted on a substrate with decoupling capacitors. The TMS418160ADZ is described in the TMS418160A data
sheet (literature number SMKS891). The TM248CBK32H / I SIMM is available in the double-sided BK-leadless
module for use with sockets.
operation
The TM124BBK32H / I operates as two TMS418160ADZ DRAMs, connected as shown in the functional block
diagram and Table 1. The TM248CBK32H / I operates as four TMS418160ADZ DRAMs connected as shown
in the functional block diagram and Table 1. The common I / O feature dictates the use of early-write cycles to
prevent contention on D and Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright  1997, Texas Instruments Incorporated
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