TLV2354_14 Datasheet, PDF (1/19 Pages) Texas Instruments – LinCMOSE QUADRUPLE LOW-VOLTAGE DIFFERENTIAL COMPARATORS

TLV2354, TLV2354Y
LinCMOS™ QUADRUPLE LOW-VOLTAGE DIFFERENTIAL COMPARATORS
D Wide Range of Supply Voltages
2 V to 8 V
D Fully Characterized at 3 V and 5 V
D Very-Low Supply-Current Drain
240 µA Typ at 3 V
D Common-Mode Input Voltage Range
Includes Ground
D High Input Impedance . . . 10¹² Ω Typ
SLCS012C – MAY 1992 – REVISED AUGUST 2000
D Fast Response Time . . . 200 ns Typ for
TTL-Level Input Step
D Extremely Low Input Bias Current
5 pA Typ
D Output Compatible With TTL, MOS, and
CMOS
D Built-In ESD Protection
description
symbol (each comparator)
The TLV2354 consists of four independent,
low-power comparators specifically designed for
IN +
single power-supply applications and operateS
OUT
with power-supply rails as low as 2 V. When
IN –
powered from a 3-V supply, the typical supply
current is only 240 µA.
The TLV2354 is designed using the Texas Instruments LinCMOS™ technology and, therefore, features an
extremely high input impedance (typically greater than 10¹² Ω), which allows direct interfacing with
high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup
resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic
wired-AND relationships. The TLV2354I is fully characterized for operation from – 40°C to 85°C. The TLV2354M
is fully characterized for operation from – 55°C to 125°C.
The TLV2354 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a
1000-V ESD rating using human body model testing. However, care should be exercised in handling this device
as exposure to ESD may result in degradation of the device parametric performance.
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
at 25°C
SMALL
OUTLINE
(D)†
CHIP
CARRIER
(FK)
CERAMIC
DIP
(J)
PLASTIC
DIP
(N)
TSSOP
(PW)‡
– 40°C to
85°C
5 mV TLV2354ID
—
—
TLV2354IN TLV2354IPW
– 55°C to
125°C
5 mV
—
TLV2354MFK TLV2354MJ
—
—
† _{The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLV2352IDR).}
‡ _{The PW packages are only available left-ended taped and reeled (e.g., TLV2354IPW).}
CERAMIC
FLATPACK
(W)
CHIP
FORM
(Y)
—
TLV2354MW
TLV2354Y
These devices have limited built-in protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LINCMOS is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 2000, Texas Instruments Incorporated
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
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