TLV2332_16 Datasheet, PDF (1/33 Pages) Texas Instruments – LinCMOSE LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS

D Wide Range of Supply Voltages Over
Specified Temperature Range:
T_A = – 40°C to 85°C . . . 2 V to 8 V
D Fully Characterized at 3 V and 5 V
D Single-Supply Operation
D Common-Mode Input-Voltage Range
Extends Below the Negative Rail and up to
V_DD – 1 V at T_A = 25°C
D Output Voltage Range Includes Negative
Rail
D High Input Impedance . . . 10¹² Ω Typ
D ESD-Protection Circuitry
D Designed-In Latch-Up Immunity
description
The TLV233x operational amplifiers are in a family
of devices that has been specifically designed for
use in low-voltage single-supply applications.
Unlike the TLV2322 which is optimized for
ultra-low power, the TLV233x is designed to
provide a combination of low power and good ac
performance. Each amplifier is fully functional
down to a minimum supply voltage of 2 V, is fully
characterized, tested, and specified at both 3-V
and 5-V power supplies. The common-mode
input-voltage range includes the negative rail and
extends to within 1 V of the positive rail.
Having a maximum supply current of only 310 µA
per amplifier over full temperature range, the
TLV233x devices offer a combination of good ac
performance and microampere supply currents.
From a 3-V power supply, the amplifier’s typical
slew rate is 0.38 V/µs and its bandwidth is
300 kHz.
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS™ LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
TLV2332
D OR P PACKAGE
(TOP VIEW)
1OUT 1
1IN – 2
1IN + 3
V_DD– / GND 4
8 V_DD
7 2OUT
6 2IN –
5 2IN +
TLV2332
PW PACKAGE
(TOP VIEW)
1OUT
1
8
V_{DD +}
1IN–
2
7
2OUT
1IN +
3
6
2IN –
V_{DD –} / GND
4
5
2IN +
TLV2334
D OR N PACKAGE
(TOP VIEW)
1OUT ₁
1IN – 2
1IN + 3
V_{DD +} 4
2IN + 5
2N – 6
2OUT 7
14 4OUT
13 4IN –
12 4IN +
11 V_{DD – / GND}
10 3IN +
9 3IN –
8 3OUT
1OUT
1IN –
1IN +
V_{DD +}
2IN +
2IN –
2OUT
TLV2334
PW PACKAGE
(TOP VIEW)
1 14
7
8
4OUT
4IN –
4IN +
V_{DD – / GND}
3IN +
3IN –
3OUT
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25°C
SMALL OUTLINE†
PLASTIC DIP PLASTIC DIP
TSSOP‡
(D)
(N)
(P)
(PW)
– 40°C to 85°C
9 mV
10 mV
TLV2332ID
TLV2334ID
—
TLV2334IN
TLV2332IP
—
TLV2332IPWLE
TLV2334IPWLE
† _{The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2332IDR).}
‡ _{The PW package is only available left-end taped and reeled (e.g., TLV2332IPWLE).}
§ _{Chip forms are tested at 25°C only.}
CHIP FORM§
(Y)
TLV2332Y
TLV2334Y
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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