T1G4005528-FS Datasheet, PDF (1/4 Pages) TriQuint Semiconductor – 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor

T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio
communications
• Test instrumentation
• Avionics
• Wideband or narrowband amplifiers
Product Features
• Frequency: DC to 3.5 GHz
Functional Block Diagram
• Linear Gain: >15 dB at 3.5 GHz
• Operating Voltage: 28 V
1
1.524
• Output Power (P_3dB): 55 W at 3.5 GHz
• Lead-free and RoHS compliant
General Description
The TriQuint T1G4005528-FS is a 55 W (P_3dB)
discrete GaN on SiC HEMT which operates from
DC to 3.5 GHz. The device is constructed with
TriQuint’s proven 0.25 µm production process,
which features advanced field plate techniques
to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management
costs.
5.4²61
Pin Configurations
Pin #
Symbol
1
RF Output
2
RF Input ^9.652
Flange
Source
3.505
+.000
-.203
Ordering Information
Material No. Part No.
1078974 T1G4005528-
FS
1079752 T1G4005528-
FS-EVB1
Description
Packaged part:
Flangeless
3.0-3.5 GHz
Eval Brd
ECCN
EAR99
EAR99
Datasheet: Rev D 8/10/2011
© 2011 TriQuint Semiconductor, Inc.
–1–
Disclaimer: Subject to change without notice
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