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SN64BCT2827C Datasheet, PDF (1/5 Pages) Texas Instruments – 10-BIT BUS/MOS MEMORY DRIVER WITH 3-STATE OUTPUTS
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
• Output Ports Have Equivalent 33-Ω Series
Resistors, So No External Resistors Are
Required
• High-Impedance State During Power Up
and Power Down
• 3-State Outputs Drive Bus Lines or
Buffer-Memory Address Registers
• Flow-Through Architecture Optimizes PCB
Layout
• Package Options Include Plastic
Small-Outline (DW) Packages and Standard
Plastic 300-mil DIPs (NT)
SN64BCT2827C
10ĆBIT BUS/MOS MEMORY DRIVER
WITH 3ĆSTATE OUTPUTS
SCBS415 − APRIL 1987 − REVISED NOVEMBER 1993
DW OR NT PACKAGE
(TOP VIEW)
OE1 1
A1 2
A2 3
A3 4
A4 5
A5 6
A6 7
A7 8
A8 9
A9 10
A10 11
GND 12
24 VCC
23 Y1
22 Y2
21 Y3
20 Y4
19 Y5
18 Y6
17 Y7
16 Y8
15 Y9
14 Y10
13 OE2
description
This 10-bit buffer and bus/MOS driver provides a high-performance bus interface for wide data paths or buses
carrying parity.
The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2)
input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state
during power-up and power-down conditions. The outputs remain in the high-impedance state while the device
is powered down.
The outputs, which are designed to source or sink up to 12 mA, include 33-Ω series resistors to reduce overshoot
and undershoot.
The SN64BCT2827C is characterized for operation from − 40°C to 85°C and 0°C to 70°C.
FUNCTION TABLE
INPUTS
OE1 OE2 A
OUTPUT
Y
L
L
L
L
L
L
H
H
H
X
X
Z
X
H
X
Z
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright  1993, Texas Instruments Incorporated
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