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MSP430X43X1_17 Datasheet, PDF (1/82 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER
MSP430x43x1, MSP430x43x, MSP430x44x1, MSP430x44x
MIXED SIGNAL MICROCONTROLLER
D Low Supply-Voltage Range, 1.8 V to 3.6 V
D Ultralow-Power Consumption:
− Active Mode: 280 µA at 1 MHz, 2.2 V
− Standby Mode: 1.1 µA
− Off Mode (RAM Retention): 0.1 µA
D Five Power Saving Modes
D Wake-Up From Standby Mode in Less
Than 6 µs
D 16-Bit RISC Architecture,
125-ns Instruction Cycle Time
D 12-Bit A/D Converter With Internal
Reference, Sample-and-Hold and
Autoscan Feature
D 16-Bit Timer_B With Three† or Seven‡
Capture/Compare-With-Shadow Registers
D 16-Bit Timer_A With Three
Capture/Compare Registers
D On-Chip Comparator
D Serial Communication Interface (USART),
Select Asynchronous UART or
Synchronous SPI by Software:
− Two USARTs (USART0, USART1)†
− One USART (USART0)‡
D Brownout Detector
D Supply Voltage Supervisor/Monitor With
Programmable Level Detection
D Serial Onboard Programming,
No External Programming Voltage Needed
Programmable Code Protection by Security
Fuse
SLAS344G − JANUARY 2002 − REVISED OCTOBER 2009
D Integrated LCD Driver for up to
160 Segments
D Bootstrap Loader
D Family Members Include:
− MSP430F435, MSP430F4351§:
16KB+256B Flash Memory,
512B RAM
− MSP430F436, MSP430F4361§:
24KB+256B Flash Memory,
1KB RAM
− MSP430F437, MSP430F4371§:
32KB+256B Flash Memory,
1KB RAM
− MSP430F447:
32KB+256B Flash Memory,
1KB RAM
− MSP430F448, MSP430F4481§:
48KB+256B Flash Memory,
2KB RAM
− MSP430F449, MSP430F4491§:
60KB+256B Flash Memory,
2KB RAM
D For Complete Module Descriptions, See
The MSP430x4xx Family User’s Guide,
Literature Number SLAU056
† MSP430F43x, and MSP430F43x1 devices
‡ MSP430F44x, and MSP430F44x1 devices
§ The MSP430F43x1 and MSP430F44x1 devices are identical to
the MSP430F43x and MSP430F44x devices, respectively − with
the exception that the ADC12 module is not implemented.
description
The Texas Instruments MSP430 family of ultralow power microcontrollers consists of several devices featuring
different sets of peripherals targeted for various applications. The architecture, combined with five low-power
modes, is optimized to achieve extended battery life in portable measurement applications. The devices feature
a powerful 16-bit RISC CPU, 16-bit registers, and constant generators that contribute to maximum code
efficiency. The digitally controlled oscillator (DCO) allows wake-up from low-power modes to active mode in less
than 6 µs.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range
from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage
because very small parametric changes could cause the device not to meet its published specifications. These devices have limited
built-in ESD protection.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright  2009, Texas Instruments Incorporated
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