LPC660 Datasheet, PDF (1/24 Pages) National Semiconductor (TI) – Low Power CMOS Quad Operational Amplifier

LPC660
www.ti.com
SNOS554D – MAY 1998 – REVISED MARCH 2013
LPC660 Low Power CMOS Quad Operational Amplifier
Check for Samples: LPC660
FEATURES
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•2 Rail-to-rail output swing
• Micropower operation: (1 mW)
• Specified for 100 kΩ and 5 kΩ loads
• High voltage gain: 120 dB
• Low input offset voltage: 3 mV
• Low offset voltage drift: 1.3 μV/°C
• Ultra low input bias current: 2 fA
• Input common-mode includes V^−
• Operation range from +5V to +15V
• Low distortion: 0.01% at 1 kHz
• Slew rate: 0.11 V/μs
• Full military temp. range available
APPLICATIONS
• High-impedance buffer
• Precision current-to-voltage converter
• Long-term integrator
• High-impedance preamplifier
• Active filter
• Sample-and-Hold circuit
• Peak detector
DESCRIPTION
The LPC660 CMOS Quad operational amplifier is
ideal for operation from a single supply. It features a
wide range of operating voltages from +5V to +15V
and features rail-to-rail output swing in addition to an
input common-mode range that includes ground.
Performance limitations that have plagued CMOS
amplifiers in the past are not a problem with this
design. Input V_OS, drift, and broadband noise as well
as voltage gain (into 100 kΩ and 5 kΩ) are all equal
to or better than widely accepted bipolar equivalents,
while the power supply requirement is typically less
than 1 mW.
This chip is built with National's advanced Double-
Poly Silicon-Gate CMOS process.
See the LPC662 datasheet for a Dual CMOS
operational amplifier and LPC661 datasheet for a
single CMOS operational amplifier with these same
features.
Application Circuit
Oscillator frequency is determined by R1, R2, C1, and C2:
f_OSC = 1/2πRC
where R = R1 = R2 and C = C1 = C2.
Figure 1. Sine-Wave Oscillator
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