LP8900 Datasheet, PDF (1/23 Pages) National Semiconductor (TI) – Ultra Low Noise, Dual 200mA Linear Regulator for RF/Analog Circuits

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LP8900
SNVS542E – MAY 2008 – REVISED JUNE 2016
LP8900 200-mA Ultra-Low-Noise Dual LDO
For RF and Analog Circuits
1 Features
•1 Input Voltage Operation: 1.8 V to 5.5 V
• Output Voltage: 1.2 V to 3.6 V
• Accuracy Over Temperature: 1%
• Output Voltage Noise: 6 µV_RMS
• PSRR: 75 dB at 1 kHz
• Dropout: 110 mV at 200 mA Load
• Quiescent Current: 48 µA per Regulator
• Start-Up Time: 80 µs
• Stable With Ceramic Capacitors as Small as 0402
• Thermal-Overload and Short-Circuit Protection
2 Applications
• Battery-Operated Devices
• Hand-Held Information Appliances
• Noise Sensitive RF Applications
• DC-DC Convertor Post Regulation and Filter
3 Description
The LP8900 is a dual LDO capable of supplying 200-
mA output current per regulator. Designed to meet
the requirements of RF and analog circuits, the
LP8900 provides low device noise, high PSRR, low
quiescent current, and superior line transient
response figures.
Using new innovative design techniques, the LP8900
offers class-leading device noise performance without
a noise bypass capacitor.
The LP8900 is designed to be stable with space
saving ceramic capacitors as small as 0402 case
size, enabling a solution size < 4 mm². Performance
is specified for a –40°C to +125°C junction
temperature range.
Output voltage options from 1.2 V to 3.6 V are
available; for availability, contact your local TI sales
office.
Device Information⁽¹⁾
PART NUMBER
PACKAGE
BODY SIZE (MAX)
LP8900
DSBGA (6)
1.49 mm × 1.09 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
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Typical Application Circuit
V_IN
V_EN 1
C_IN 1 PF
LP8900
IN
OUT1
EN1
C_OUT 1 1 PF
V_OUT 1
V_EN 2
EN2
OUT2
GND
C_OUT 2 1 PF
V_OUT 2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.