LMV551 Datasheet, PDF (1/27 Pages) Texas Instruments – LMV551/LMV552/LMV554 3 MHz, Micropower RRO Amplifiers

LMV551, LMV552
www.ti.com
SNOSAQ5G – FEBRUARY 2007 – REVISED FEBRUARY 2013
LMV551/LMV552/LMV554 3 MHz, Micropower RRO Amplifiers
Check for Samples: LMV551, LMV552
FEATURES
1
•2 (Typical 5V Supply, Unless Otherwise Noted.)
• Guaranteed 3V and 5.0V Performance
• High Unity Gain Bandwidth 3 MHz
• Supply Current (Per Amplifier) 37 µA
• CMRR 93 dB
• PSRR 90 dB
• Slew Rate 1 V/µs
• Output Swing with 100 kΩ Load 70 mV From
Rail
• Total Harmonic Distortion 0.003% @ 1 kHz, 2
kΩ
• Temperature Range −40°C to 125°C
APPLICATIONS
• Active Filter
• Portable Equipment
• Automotive
• Battery Powered Systems
• Sensors and Instrumentation
DESCRIPTION
The LMV551/LMV552/LMV554 are high performance,
low power operational amplifiers implemented with
TI’s advanced VIP50 process. They feature 3 MHz of
bandwidth while consuming only 37 μA of current per
amplifier, which is an exceptional bandwidth to power
ratio in this op amp class. These amplifiers are unity
gain stable and provide an excellent solution for low
power applications requiring a wide bandwidth.
The LMV551/LMV552/LMV554 have a rail-to-rail
output stage and an input common mode range that
extends below ground.
The LMV551/LMV552/LMV554 have an operating
supply voltage range from 2.7V to 5.5V. These
amplifiers can operate over a wide temperature range
(−40°C to 125°C) making them a great choice for
automotive applications, sensor applications as well
as portable instrumentation applications. The
LMV551 is offered in the ultra tiny 5-Pin SC70 and 5-
Pin SOT-23 package. The LMV552 is offered in an 8-
Pin VSSOP package. The LMV554 is offered in the
14-Pin TSSOP.
Typical Application
R₁
C_{C1 1 k:}
+
V_IN
-
R_B1
V⁺
C_F
R₂
100 k:
-
+
R_B2
+
V_OUT
-
120
120
100
100
PHASE
80
80
60
60
GAIN
40
40
20
20
0
0
-20
V_S = 5V
-40
100 1k 10k 100k 1M
FREQUENCY (Hz)
-20
-40
10M
Figure .
Figure 1. Open Loop Gain and Phase vs.
Frequency
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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