LMV301 Datasheet, PDF (1/27 Pages) National Semiconductor (TI) – Low Input Bias Current, 1.8V Op Amp w/ Rail-to-Rail Output

LMV301
www.ti.com
SNOS968A – MAY 2004 – REVISED MAY 2013
LMV301 Low Input Bias Current, 1.8V Op Amp w/ Rail-to-Rail Output
Check for Samples: LMV301
FEATURES
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•2 Input Bias Current: 0.182 pA
• Gain Bandwidth Product: 1 MHz
• Supply Voltage at 1.8V: 1.8 to 5 V
• Supply Current: 150 µA
• Input Referred Voltage Noise at 1kHz:
40nV/√Hz
• DC Gain (600Ω Load): 100 dB
• Output Voltage Range at 1.8V: 0.024 to 1.77 V
• Input Common-Mode Voltage Range: −0.3 to
±1.2 V
APPLICATIONS
• Thermocouple Amplifiers
• Photo Current Amplifiers
• Transducer Amplifiers
• Sample and Hold Circuits
• Low Frequency Active Filters
DESCRIPTION
The LMV301 CMOS operational amplifier is ideal for
single supply, low voltage operation with an ensured
operating voltage range from 1.8V to 5V. The low
input bias current of less than 0.182pA typical,
eliminates input voltage errors that may originate from
small input signals. This makes the LMV301 ideal for
electrometer applications requiring low input leakage
such as sensitive photodetection transimpedance
amplifiers and sensor amplifiers. The LMV301 also
features a rail-to-rail output voltage swing in addition
to a input common-mode range that includes ground.
The LMV301 will drive a 600Ω resistive load and up
to 1000pF capacitive load in unity gain follower
applications. The low supply voltage also makes the
LMV301 well suited for portable two-cell battery
systems and single cell Li-Ion systems.
The LMV301 exhibits excellent speed-power ratio,
achieving 1MHz at unity gain with low supply current.
The high DC gain of 100dB makes it ideal for other
low frequency applications.
The LMV301 is offered in a space saving SC70
package, which is only 2.0X2.1X1.0mm. It is also
similar to the LMV321 except the LMV301 has a
CMOS input.
Connection Diagram
Top View
Applications Circuit
Figure 2. Low Leakage Sample and Hold
Figure 1. SC70-5 Package
See Package Number DCK0005A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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