LMV1032_15 Datasheet, PDF (1/18 Pages) Texas Instruments – LMV1032-25 Amplifiers for 3-Wire Analog Electret Microphones

LMV1032
www.ti.com
SNAS233G – DECEMBER 2003 – REVISED MAY 2013
LMV1032-06/LMV1032-15/LMV1032-25 Amplifiers for 3-Wire Analog Electret Microphones
Check for Samples: LMV1032
FEATURES
1
•2 (Typical LMV1032-15, 1.7V Supply; Unless
Otherwise Noted)
• Output Voltage Noise (A-weighted) −89 dBV
• Low Supply Current 60 μA
• Supply Voltage 1.7V to 5V
• PSRR 70 dB
• Signal to Noise Ratio 61 dB
• Input Capacitance 2 pF
• Input Impedance >100 MΩ
• Output Impedance <200Ω
• Max Input Signal 170 mV_PP
• Temperature Range −40°C to 85°C
• Large Dome 4-Bump DSBGA Package with
Improved Adhesion Technology.
APPLICATIONS
• Mobile Communications - Bluetooth
• Automotive Accessories
• Cellular Phones
• PDAs
• Accessory Microphone Products
DESCRIPTION
The LMV1032s are an audio amplifier series for small
form factor electret microphones. They are designed
to replace the JFET preamp currently being used.
The LMV1032 series is ideal for extended battery life
applications, such as a Bluetooth communication link.
The addition of a third pin to an electret microphones
that incorporates an LMV1032 allows for a dramatic
reduction in supply current as compared to the JFET
equipped electret microphone. Microphone supply
current is thus reduced to 60 µA, assuring longer
battery life. The LMV1032 series is specified for
supply voltages from 1.7V to 5V, and has fixed
voltage gains of 6 dB, 15 dB and 25 dB.
The LMV1032 series offers low output impedance
over the voice bandwidth, excellent power supply
rejection (PSRR), and stability over temperature.
The devices are offered in space saving 4-bump ultra
thin DSBGA lead free packages and are thus ideally
suited for the form factor of miniature electret
microphone packages. These extremely miniature
packages have the Large Dome Bump (LDB)
technology. This DSBGA technology is designed for
microphone PCBs requiring 1 kg adhesion criteria.
Block Diagram
Electret Microphone
V_IN
1x
V_DD
GAIN
V_OUT
V_DC
GND
DIAPHRAGM
xx^xx^{x x}
ELECTRET
CONNECTOR
x
x
x
IC
AIRGAP
BACKPLATE
LMV1032
V_CC
x
x
V_OUT
GND
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2013, Texas Instruments Incorporated