LMV1015 Datasheet, PDF (1/14 Pages) National Semiconductor (TI) – Built-in Gain IC’s for High Sensitivity 2-Wire Microphones

LMV1015
www.ti.com
SNAS291B – MARCH 2005 – REVISED APRIL 2013
LMV1015 Analog Series: Built-in Gain IC's for High Sensitivity 2-Wire Microphones
Check for Samples: LMV1015
FEATURES
1
•2 (Typical LMV1015-15, 2.2V supply, R_L = 2.2 kΩ,
C = 2.2 μF, V_IN = 18 mV_PP, unless otherwise
specified)
• Supply Voltage: 2V - 5V
• Supply Current: <180 μA
• Signal to Noise Ratio (A-Weighted): 60 dB
• Output Voltage Noise (A-Weighted): −89 dBV
• Total Harmonic Distortion 0.09%
• Voltage Gain
– LMV1015-15: 15.6 dB
– LMV1015-25: 23.8 dB
• Temperature Range: −40°C to 85°C
• Large Dome 4-Bump DSBGA Package with
Improved Adhesion Technology.
APPLICATIONS
• Cellular Phones
• Headsets
• Mobile Communications
• Automotive Accessories
• PDAs
• Accessory Microphone Products
DESCRIPTION
The LMV1015 is an audio amplifier series for small
form factor electret microphones. This 2-wire portfolio
is designed to replace the JFET amplifier. The
LMV1015 series is ideally suited for applications
requiring high signal integrity in the presence of
ambient or RF noise, such as in cellular
communications. The LMV1015 audio amplifiers are
ensured to operate over a 2.2V to 5.0V supply
voltage range with fixed gains of 15.6 dB and 23.8
dB. The devices offer excellent THD, gain accuracy
and temperature stability as compared to a JFET
microphone.
The LMV1015 series enables a two-pin electret
microphone solution, which provides direct pin-to-pin
compatibility with the existing older JFET market.
Texas Instruments' built-in gain families are offered in
extremely thin space saving 4-bump DSBGA
packages (0.3 mm maximum). The LMV1015XR is
designed for 1.0 mm ECM canisters and thicker.
These extremely miniature packages have the Large
Dome Bump (LDB) technology. This DSBGA
technology is designed for microphone PCBs
requiring 1 kg adhesion criteria.
Schematic Diagram
Built-In Gain Electret Microphone
INPUT
-
+
-+
V_DD
2.2k
2.2PF
OUTPUT
DIAPHRAGM
x^xx^xx^{x x}
ELECTRET
CONNECTOR
x
LMV1015
x
x
IC
AIRGAP
BACKPLATE
x
x
GND
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2013, Texas Instruments Incorporated