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LM5050-1_13 Datasheet, PDF (1/21 Pages) Texas Instruments – High Side OR-ing FET Controller
LM5050-1, LM5050-1-Q1
www.ti.com
SNVS629D – MAY 2011 – REVISED JUNE 2013
LM5050-1/LM5050-1-Q1 High Side OR-ing FET Controller
Check for Samples: LM5050-1, LM5050-1-Q1
FEATURES
1
•2 Available in Standard and AEC-Q100 Qualified
Versions LM5050Q0MK-1 (up to 150°C TJ) and
LM5050Q1MK-1 (up to 125°C TJ)
• Wide Operating Input Voltage Range, VIN: 5V to
75V
• +100 Volt Transient Capability
• Charge Pump Gate Driver for External N-
Channel MOSFET
• Fast 50ns Response to Current Reversal
• 2A Peak Gate Turn-Off Current
• Minimum VDS Clamp for Faster Turn-Off
• Package: SOT-6 (Thin SOT-23-6)
DESCRIPTION
The LM5050-1 High Side OR-ing FET Controller
operates in conjunction with an external MOSFET as
an ideal diode rectifier when connected in series with
a power source. This ORing controller allows
MOSFETs to replace diode rectifiers in power
distribution networks thus reducing both power loss
and voltage drops.
The LM5050-1 controller provides charge pump gate
drive for an external N-Channel MOSFET and a fast
response comparator to turn off the FET when
current flows in the reverse direction. The LM5050-1
can connect power supplies ranging from +5V to
+75V and can withstand transients up to +100V.
APPLICATIONS
• Active OR-ing of Redundant (N+1) Power
Supplies
Typical Application Circuits
VIN
+5.0V to +75V
Shutdown
GND
IN
Low= FET On, High= FET Off
OFF
GATE
OUT
VS
LM5050-1
GND
Figure 1. Full Application
VOUT
100:
0.1 PF
GND
PS1
IN GATE OUT
LM5050-1 VS
GND
CLOAD RLOAD
PS2
IN GATE OUT
LM5050-1 VS
GND
Figure 2. Typical Redundant Supply Configuration
1
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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