LM113_13 Datasheet, PDF (1/10 Pages) Texas Instruments – Reference Diode

LM113, LM313
www.ti.com
SNVS747A – SEPTEMBER 2011 – REVISED MAY 2013
LM113/LM313 Reference Diode
Check for Samples: LM113, LM313
FEATURES
1
•2 Low Breakdown Voltage: 1.220V
• Dynamic Impedance of 0.3Ω From 500 μA to 20
mA
• Temperature Stability Typically 1% Over −55°C
to 125°C Range (LM113), 0°C to 70°C (LM313)
• Tight Tolerance: ±5%, ±2% or ±1%
The characteristics of this reference
recommend it for use in bias-regulation
circuitry, in low-voltage power supplies or in
battery powered equipment. The fact that the
breakdown voltage is equal to a physical
property of silicon—the energy-band gap
voltage—makes it useful for many
temperature-compensation and temperature-
measurement functions.
DESCRIPTION
The LM113/LM313 are temperature compensated,
low voltage reference diodes. They feature extremely-
tight regulation over a wide range of operating
currents in addition to an unusually-low breakdown
voltage and good temperature stability.
The diodes are synthesized using transistors and
resistors in a monolithic integrated circuit. As such,
they have the same low noise and long term stability
as modern IC op amps. Further, output voltage of the
reference depends only on highly-predictable
properties of components in the IC; so they can be
manufactured and supplied to tight tolerances.
Schematic and Connection Diagram
Figure 1. Metal Can Package
See Package Number NDU
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011–2013, Texas Instruments Incorporated