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LM113QML_13 Datasheet, PDF (1/10 Pages) Texas Instruments – Reference Diode
LM113QML is Obsolete
LM113QML, LM113QML-SP
www.ti.com
SNVS367A – DECEMBER 2010 – REVISED APRIL 2013
LM113QML Reference Diode
Check for Samples: LM113QML, LM113QML-SP
FEATURES
1
•2 Low Breakdown Voltage: 1.220V
• Dynamic Impedance of 0.3Ω from 500 μA to 20
mA
• Temperature Stability Typically 1% over−55°C
to 125°C Range
• Tight Tolerance: ±5% or ±1%
– The characteristics of this reference
recommend it for use in bias-regulation
circuitry, in low-voltage power supplies or
in battery powered equipment. The fact that
the breakdown voltage is equal to a
physical property of silicon—the energy-
band gap voltage—makes it useful for
many temperature-compensation and
temperature-measurement functions.
DESCRIPTION
The LM113 are temperature compensated, low
voltage reference diodes. They feature extremely-
tight regulation over a wide range of operating
currents in addition to an unusually-low breakdown
voltage and good temperature stability.
The diodes are synthesized using transistors and
resistors in a monolithic integrated circuit. As such,
they have the same low noise and long term stability
as modern IC op amps. Further, output voltage of the
reference depends only on highly-predictable
properties of components in the IC; so they can be
manufactured and supplied to tight tolerances.
Connection Diagrams
Figure 1. 2-Pin TO
See NDU0002A Package
N/C
1
N/C
2
N/C
3
N/C
4
V-
5
10
V+
9
N/C
8
N/C
7
N/C
6
N/C
Figure 2. 10-Pin CFP
1
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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