LF412JAN_13 Datasheet, PDF (1/17 Pages) Texas Instruments – Low Drift Dual JFET Input Operational Amplifier

Not Recommended For New Designs
LF412JAN
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SNOSAQ7A – DECEMBER 2010 – REVISED MARCH 2013
LF412JAN Low Offset, Low Drift Dual JFET Input Operational Amplifier
Check for Samples: LF412JAN
FEATURES
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•23 Input Offset Voltage Drift: 30 μV/°C (Max)
• Low Input Bias Current: 50 pA (Typ)
• Wide Gain Bandwidth: 3 MHz (Typ)
• High Slew Rate: 7V/μs (Min)
• High Input Impedance: 10¹²Î©
• Low Total Harmonic Distortion <0.02%
• Low 1/f Noise Corner: 50 Hz
• Fast Settling Time to 0.01%: 2 μs
• Low Input Noise Current: 0.01 Pa/√Hz (Typ)
DESCRIPTION
This device is a low cost, high speed, JFET input
operational amplifier with very low input offset voltage
and ensured input offset voltage drift. It requires low
supply current yet maintains a large gain bandwidth
product and fast slew rate. In addition, well matched
high voltage JFET input devices provide very low
input bias and offset currents. The LF412 dual is pin
compatible with the LM1558, allowing designers to
immediately upgrade the overall performance of
existing designs.
This amplifier may be used in applications such as
high speed integrators, fast D/A converters, sample
and hold circuits and many other circuits requiring low
input offset voltage and drift, low input bias current,
high input impedance, high slew rate and wide
bandwidth.
Connection Diagram
Simplified Schematic
Figure 1. Dual-In-Line Package
See Package Number NAB0008A
Figure 2. 1/2 Dual
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
BI-FET II is a trademark of Texas Instruments.
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All other trademarks are the property of their respective owners.
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PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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