ISO5851-Q1 Datasheet, PDF (1/40 Pages) Texas Instruments – High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

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ISO5851-Q1
SLLSEQ1 – SEPTEMBER 2016
ISO5851-Q1 High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
with Active Safety Features
1 Features
•1 Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to 125°C
Ambient Operating Temperature Range
– Device HBM Classification Level 3A
– Device CDM Classification Level C6
• 100-kV/μs Minimum Common-Mode Transient
Immunity (CMTI) at V_CM = 1500 V
• 2.5-A Peak Source and 5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Under Voltage Lock-Out (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pull-down and Default Low Outputs
with Low Supply or Floating Inputs
• 3-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Isolation Surge Withstand Voltage 12800-V_PK
• Safety and Regulatory Certifications:
– 8000-V_PK V_IOTM and 2121-V_PK V_IORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-V_RMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
– All Certifications Complete per UL, VDE, CQC,
TUV and Planned for CSA
2 Applications
• Isolated IGBT and MOSFET Drives in:
– HEV and EV Power Modules
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– Induction Heating
3 Description
The ISO5851-Q1 is a 5.7-kV_RMS, reinforced isolated
gate driver for IGBTs and MOSFETs with 2.5-A
source and 5-A sink current. The input side operates
from a single 3-V to 5.5-V supply. The output side
allows for a supply range from minimum 15-V to
maximum 30-V. Two complementary CMOS inputs
control the output state of the gate driver. The short
propagation time of 76 ns assures accurate control of
the output stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overload
condition. Upon a DESAT detect, the gate driver
output is driven low to V_EE2 potential, turning the
IGBT immediately off.
When desaturation is active, a fault signal is sent
across the isolation barrier, pulling the FLT output at
the input side low and blocking the isolator input. The
FLT output condition is latched and can be reset
through a low-active pulse at the RST input.
Device Information⁽¹⁾
PART NUMBER PACKAGE
BODY SIZE (NOM)
ISO5851-Q1
SOIC (16)
10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
VCC1
IN±
IN+
RDY
VCC1
FLT
VCC1
VCC1
RST
Functional Block Diagram
VCC1
VCC2
UVLO1
UVLO2
Mute
Ready
QS
Fault
QR
Decoder
Gate Drive
and
Encoder
Logic
500 µA
9V
VCC2
2V
DESAT
GND2
OUT
CLAMP
GND1
VEE2
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.