ISO5452-Q1 Datasheet, PDF (1/41 Pages) Texas Instruments – High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

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ISO5452-Q1
SLLSEQ5 – SEPTEMBER 2016
ISO5452-Q1 High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
with Split Outputs and Active Safety Features
1 Features
•1 Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to 125°C
Ambient Operating Temperature Range
– Device HBM Classification Level 3A
– Device CDM Classification Level C6
• 50-kV/μs Minimum and 100-kV/μs Typical
Common-Mode Transient Immunity (CMTI)
at V_CM = 1500 V
• Split Outputs to provide 2.5-A Peak Source and
5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Soft Turn-Off (STO) during Short Circuit
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Under Voltage Lock-Out (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pull-down and Default Low Outputs
with Low Supply or Floating Inputs
• 2.25-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Isolation Surge Withstand Voltage 10000-V_PK
• Safety and Regulatory Certifications:
– 8000-V_PK V_IOTM and 1420-V_PK V_IORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-V_RMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
– All Certifications Complete per UL, VDE, CQC,
TUV and Planned for CSA
2 Applications
• Isolated IGBT and MOSFET Drives in:
– HEV and EV Power Modules
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– Induction Heating
3 Description
The ISO5452-Q1 is a 5.7-kV_RMS, reinforced isolated
gate driver for IGBTs and MOSFETs with split
outputs, OUTH and OUTL, providing 2.5-A source
and 5-A sink current. The input side operates from a
single 2.25-V to 5.5-V supply. The output side allows
for a supply range from minimum 15-V to maximum
30-V. Two complementary CMOS inputs control the
output state of the gate driver. The short propagation
time of 76 ns assures accurate control of the output
stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overcurrent
condition. Upon a DESAT detect, a Mute logic
immediately blocks the output of the isolator and
initiates a soft-turn-off procedure which disables
OUTH, and pulls OUTL to low over a time span of
2 μs. When OUTL reaches 2 V with respect to the
most negative supply potential, V_EE2, the gate driver
output is pulled hard to V_EE2 potential, turning the
IGBT immediately off.
Device Information⁽¹⁾
PART NUMBER PACKAGE
BODY SIZE (NOM)
ISO5452-Q1
SOIC (16)
10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Functional Block Diagram
VCC1
VCC1
IN±
UVLO1
IN+
RDY
VCC1
FLT
VCC1
VCC1
RST
Ready
QS
Fault
QR
Decoder
VCC2
UVLO2
Mute
Gate Drive
and
Encoder
Logic
500 µA
9V
VCC2
DESAT
GND2
OUTH
STO
OUTL
2V
CLAMP
GND1
VEE2
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.