DS1691A Datasheet, PDF (1/15 Pages) National Semiconductor (TI) – (RS-422/RS-423) Line Drivers with TRI-STATE Outputs

DS1691A, DS3691
www.ti.com
SNLS357E – JULY 1998 – REVISED APRIL 2013
DS3691 (RS-422/RS-423) Line Drivers with TRI-STATE Outputs
Check for Samples: DS1691A, DS3691
FEATURES
1
•2 Dual RS-422 Line Driver with Mode Pin Low, or
Quad RS-423 Line Driver with Mode Pin High
• TRI-STATE Outputs in RS-422 Mode
• Short Circuit Protection for Both Source and
Sink Outputs
• Outputs Will Not Clamp Line with Power Off or
In TRI-STATE
• 100Ω Transmission Line Drive Capability
• Low I_CC and I_EE Power Consumption
– RS-422: I_CC = 9 mA/driver Typ
– RS-423: I_CC = 4.5 mA/driver Typ
– I _EE = 2.5 mA/driver Typ
• Low Current PNP Inputs Compatible with TTL,
MOS and CMOS
• Pin Compatible with AM26LS30
DESCRIPTION
The DS3691 is a low power Schottky TTL line driver
designed to meet the requirements of EIA standards
RS-422 and RS-423. It features 4 buffered outputs
with high source and sink current capability with
internal short circuit protection. A mode control input
provides a choice of operation either as 4 single-
ended line drivers or 2 differential line drivers. A rise
time control pin allows the use of an external
capacitor to slow the rise time for suppression of near
end crosstalk to other receivers in the cable. Rise
time capacitors are primarily intended for
waveshaping output signals in the single-ended driver
mode. Multipoint applications in differential mode with
waveshaping capacitors is not allowed.
With the mode select pin low, the DS3691 are dual-
differential line drivers with TRI-STATE outputs. They
feature ±10V output common-mode range in TRI-
STATE mode and 0V output unbalance when
operated with ±5V supply.
Connection Diagrams
With Mode Select LOW
(RS-422 Connection)
With Mode Select HIGH
(RS-423 Connection)
Figure 1. SOIC Package
See Package Number D0016A
Top View
Figure 2. SOIC Package
See Package Number D0016A
Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1998–2013, Texas Instruments Incorporated