DRV8702-Q1 Datasheet, PDF (1/6 Pages) Texas Instruments – Automotive H-Bridge Gate Driver

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DRV8702-Q1, DRV8703-Q1
SLVSDR9 – OCTOBER 2016
DRV870x-Q1 Automotive H-Bridge Gate Driver
1 Features
•1 AEC-Q100 Qualified for Automotive Applications
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
• Single H-Bridge Gate Driver
– Drives Four External N-Channel MOSFETs
– Supports 100% PWM Duty Cycle
• 5.5- to 45-V Operating Supply-Voltage Range
• Three Control-Interface Options
– PH/EN, Independent H-Bridge, and PWM
• Serial Interface for Configuration (DRV8703-Q1)
• Adjustable Gate Drive For Slew-Rate Control
– 10- to 250-mA Source Current
– 20- to 500-mA Sink Current
• Independent Control of Each H-Bridge
• Supports 1.8-V, 3.3-V, and 5-V logic inputs
• Current-Shunt Amplifier
• Integrated PWM Current Regulation
• Low-Power Sleep Mode
• Small Package and Footprint
– 32-Pin VQFN
– 5 mm × 5 mm
– Wettable Flanks Package
• Protection Features
– Supply Undervoltage Lockout (UVLO)
– Charge-Pump Undervoltage (CPUV) Lockout
– Overcurrent Protection (OCP)
– Gate-Driver Fault (GDF)
– Thermal Shutdown (TSD)
– Watchdog Timer (DRV8703-Q1)
– Fault-Condition Output (nFAULT)
Simplified Schematic
5.5 to 45 V
PH/EN or PWM
DRV870x-Q1
nSLEEP
VREF
Gate
H-Bridge Gate Driver
Drive
FETs
M
Sense Output
nFAULT
Shunt Amplifier
Current Regulation
Current
Sense
Protection
Copyright © 2016, Texas Instruments Incorporated
2 Applications
• Power Window Lift
• Power Sunroof
• Power Seats
• Power Sliding Door
• Power Folding Roof
• Power Trunk and Tailgate
• Brushed-DC Pumps
3 Description
The DRV870x-Q1 family of devices is a single H-
bridge gate driver that uses four external N-channel
MOSFETs targeted to drive a bidirectional brushed-
DC motor.
A PH/EN, independent H-Bridge, or PWM interface
allows simple interfacing to controller circuits. An
internal sense amplifier provides adjustable current
control. The gate driver includes circuitry to regulate
the winding current using fixed off-time PWM current
chopping.
The DRV870x-Q1 family of devices drives both high-
side and low-side FETs with a 10.5-V V_GS gate drive.
The gate-drive current for all external FETs is
configurable with a single external resistor or through
the serial peripheral interface (SPI).
A low-power sleep mode is provided which shuts
down internal circuitry to achieve a very-low
quiescent-current draw.
Device Information⁽¹⁾
PART NUMBER
PACKAGE
BODY SIZE (NOM)
DRV8702-Q1
DRV8703-Q1
VQFN (32)
5.00 mm × 5.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
High-side
gate drive
current
ISTRONG
Gate-Drive Current
tDRIVE
IHOLD
IDRIVE,SINK
ISTRONG
High-side
VGS
Low-side
gate
drive
current
Low-side
VGS
IHOLD
IDRIVE,SINK
ISTRONG
tDRIVE
IHOLD
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCT PREVIEW Information. Product in design phase of
development. Subject to change or discontinuance without notice.